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EP3162922
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EP About this file: EP3162922
| EP3162922 - ß-Ga2O3 SINGLE-CRYSTAL SUBSTRATE& xA; [Right-click to bookmark this link] | Status | Examination is in progress Status updated on 23.10.2020 Database last updated on 26.07.2024 | |
| Former | Request for examination was made Status updated on 31.03.2017 | ||
| Former | The international publication has been made Status updated on 09.12.2016 | Most recent event Tooltip | 25.06.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Tamura Corporation 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | [2022/22] |
| Former [2017/18] | For all designated states Tamura Corporation 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | ||
| For all designated states Koha Co., Ltd. 1-19-43, Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | Inventor(s) | 01 /
WATANABE, Shinya c/o Tamura Corporation 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | 02 /
KOSHI, Kimiyoshi c/o Koha Co. Ltd 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | 03 /
YAMAOKA, Yu c/o Koha Co. Ltd. 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | 04 /
IIZUKA, Kazuyuki c/o Tamura Corporation 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | 05 /
TAKIZAWA, Masaru c/o Tamura Corporation 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | 06 /
MASUI, Takekazu c/o Koha Co. Ltd. 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 / JP | [2017/18] | Representative(s) | Betten & Resch Patent- und Rechtsanwälte PartGmbB Maximiliansplatz 14 80333 München / DE | [2017/18] | Application number, filing date | 15815529.1 | 29.06.2015 | [2017/18] | WO2015JP68662 | Priority number, date | JP20140135454 | 30.06.2014 Original published format: JP 2014135454 | [2017/18] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2016002708 | Date: | 07.01.2016 | Language: | JA | [2016/01] | Type: | A1 Application with search report | No.: | EP3162922 | Date: | 03.05.2017 | Language: | EN | [2017/18] | Search report(s) | International search report - published on: | JP | 07.01.2016 | (Supplementary) European search report - dispatched on: | EP | 22.02.2018 | Classification | IPC: | C30B29/16 | [2017/18] | CPC: |
C30B29/16 (EP,US);
C01G15/00 (US);
C30B15/34 (EP,US);
C01P2002/77 (US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2017/18] | Title | German: | SS-GA2O3-EINKRISTALLSUBSTRATE | [2017/18] | English: | ß-Ga2O3 SINGLE-CRYSTAL SUBSTRATE& xA; | [2017/18] | French: | (FR) SUBSTRAT MONOCRISTALLIN DE SS-GA2O3 | [2017/18] | Entry into regional phase | 08.12.2016 | Translation filed | 30.01.2017 | National basic fee paid | 30.01.2017 | Search fee paid | 30.01.2017 | Designation fee(s) paid | 30.01.2017 | Examination fee paid | Examination procedure | 08.12.2016 | Date on which the examining division has become responsible | 30.01.2017 | Examination requested [2017/18] | 24.09.2018 | Amendment by applicant (claims and/or description) | 23.10.2020 | Despatch of a communication from the examining division (Time limit: M06) | 03.05.2021 | Reply to a communication from the examining division | 18.08.2023 | Despatch of a communication from the examining division (Time limit: M06) | 21.02.2024 | Reply to a communication from the examining division | Fees paid | Renewal fee | 27.06.2017 | Renewal fee patent year 03 | 27.06.2018 | Renewal fee patent year 04 | 25.06.2019 | Renewal fee patent year 05 | 24.06.2020 | Renewal fee patent year 06 | 22.06.2021 | Renewal fee patent year 07 | 27.06.2022 | Renewal fee patent year 08 | 27.06.2023 | Renewal fee patent year 09 | 25.06.2024 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [E]EP2924150 (TAMURA SEISAKUSHO KK [JP], et al) [E] 2,4-10* paragraph [0044] - paragraph [0051]; figures 3-7; claims 1-10 *; | [X] - AIDA ET AL, "Growth of beta-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method", JAPANESE JOURNAL OF APPLIED PHY, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 47, no. 11, doi:10.1143/JJAP.47.8506, ISSN 0021-4922, (20080101), pages 8506 - 8509, (20081114), XP008175225 [X] 2,4-10 * paragraph [0003]; figures 1-3,5 * DOI: http://dx.doi.org/10.1143/JJAP.47.8506 | [X] - KOHEI SASAKI ET AL, "$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$ $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, (20130401), vol. 34, no. 4, doi:10.1109/LED.2013.2244057, ISSN 0741-3106, pages 493 - 495, XP011497999 [X] 2,4-10 * paragraph [0002]; figure 1 * DOI: http://dx.doi.org/10.1109/LED.2013.2244057 | [X] - GUENTER WAGNER ET AL, "Homoepitaxial growth of β-Ga 2 O 3 layers by metal-organic vapor phase epitaxy", PHYSICA STATUS SOLIDI (A), (20140101), vol. 211, no. 1, doi:10.1002/pssa.201330092, ISSN 1862-6300, pages 27 - 33, XP055168123 [X] 2,4-10 * paragraphs [0002] - [0003]; figures 1,5 * DOI: http://dx.doi.org/10.1002/pssa.201330092 | International search | [A]JP2013103864 (TAMURA SEISAKUSHO KK, et al) [A] 1-10 * , entire text; all drawings & US 2014/0352604 A1 & WO 2013/073497 A1 & EP 2801645 A1 & TW 201339381 A & CN 103958746 A & KR 10-2014-0092395 A *; | [A]JP2013082587 (TAMURA SEISAKUSHO KK, et al) [A] 1-10 * , entire text; all drawings (Family: none) *; | [A]JP2013237591 (NAMIKI PRECISION JEWEL CO LTD) [A] 1-10 * , entire text; all drawings (Family: none) *; | [A]WO2013035464 (TAMURA SEISAKUSHO KK [JP], et al) [A] 1-10 * , entire text; all drawings & JP 2014-221719 A & US 2014/0217554 A1 & EP 2754736 A1 & CN 103781948 A * |