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EP3311418
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EP About this file: EP3311418
| EP3311418 - RESISTANCE REDUCTION IN TRANSISTORS HAVING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS [Right-click to bookmark this link] | Status | Examination is in progress Status updated on 30.04.2021 Database last updated on 31.08.2024 | |
| Former | Request for examination was made Status updated on 23.03.2018 | ||
| Former | The international publication has been made Status updated on 23.12.2016 | Most recent event Tooltip | 01.06.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Intel Corporation 2200 Mission College Boulevard Santa Clara, CA 95054 / US | [2018/17] | Inventor(s) | 01 /
MEHANDRU, Rishabh 4606 SW 42nd Place Portland, Oregon 97221 / US | 02 /
MURTHY, Anand S. 10934 NW Lucerne Court Portland, Oregon 97229 / US | 03 /
GHANI, Tahir 14191 NW Stonebridge Drive Portland, Oregon 97229 / US | 04 /
GLASS, Glenn A. 5009 NW 124th Avenue Portland, Oregon 97229 / US | 05 /
JAMBUNATHAN, Karthik 2226 NW Thorncroft Drive Apt. 528 Hillsboro, Oregon 97124 / US | 06 /
MA, Sean T. 3306 SW Scholls Ferry Road Portland, Oregon 97221 / US | 07 /
WEBER, Cory E. 524 NE 61st Place Hillsboro, Oregon 97124 / US | [2018/17] | Representative(s) | 2SPL Patentanwälte PartG mbB Landaubogen 3 81373 München / DE | [N/P] |
| Former [2018/17] | 2SPL Patentanwälte PartG mbB Postfach 15 17 23 80050 München / DE | Application number, filing date | 15895827.2 | 19.06.2015 | [2018/17] | WO2015US36688 | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2016204786 | Date: | 22.12.2016 | Language: | EN | [2016/51] | Type: | A1 Application with search report | No.: | EP3311418 | Date: | 25.04.2018 | Language: | EN | The application published by WIPO in one of the EPO official languages on 22.12.2016 takes the place of the publication of the European patent application. | [2018/17] | Search report(s) | International search report - published on: | KR | 22.12.2016 | (Supplementary) European search report - dispatched on: | EP | 12.12.2018 | Classification | IPC: | H01L29/775, H01L29/78, H01L21/336, H01L29/08, H01L29/06, H01L29/66, H01L29/423, H01L21/02, H01L29/786, H01L27/088, H01L27/092 | [2019/02] | CPC: |
H01L29/7848 (EP,CN,KR,US);
H01L29/78 (EP,CN,US);
H01L21/0245 (US);
H01L21/02532 (US);
H01L21/02579 (US);
H01L21/30604 (US);
H01L21/76224 (US);
H01L21/8238 (KR);
H01L27/0886 (EP,KR,US);
H01L29/0649 (US);
H01L29/0673 (EP,US);
H01L29/0847 (EP,US);
H01L29/42392 (EP,CN,KR,US);
H01L29/66439 (EP,US);
H01L29/66636 (US);
H01L29/66795 (US);
H01L29/775 (EP,CN,KR,US);
H01L29/785 (EP,CN,KR,US);
H01L29/7851 (US);
H01L29/78618 (EP,CN,KR,US);
H01L29/78696 (EP,CN,KR,US);
H01L21/823814 (US);
H01L21/823821 (US);
H01L21/823878 (US);
H01L27/0924 (US);
H01L29/165 (EP,US);
H01L29/167 (EP,US);
H01L29/66545 (US)
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| Former IPC [2018/17] | H01L29/78, H01L21/336 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2018/17] | Title | German: | WIDERSTANDSREDUZIERUNG IN TRANSISTOREN MIT EPITAXIAL GEZÜCHTETEN SOURCE/DRAIN-REGIONEN | [2018/17] | English: | RESISTANCE REDUCTION IN TRANSISTORS HAVING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS | [2018/17] | French: | RÉDUCTION DE RÉSISTANCE DANS DES TRANSISTORS AYANT DES RÉGIONS DE SOURCE/DRAIN OBTENUES PAR CROISSANCE ÉPITAXIALE | [2018/17] | Entry into regional phase | 15.11.2017 | National basic fee paid | 15.11.2017 | Search fee paid | 15.11.2017 | Designation fee(s) paid | 15.11.2017 | Examination fee paid | Examination procedure | 15.11.2017 | Examination requested [2018/17] | 15.11.2017 | Date on which the examining division has become responsible | 28.06.2019 | Amendment by applicant (claims and/or description) | 29.04.2021 | Despatch of a communication from the examining division (Time limit: M04) | 12.07.2021 | Reply to a communication from the examining division | 29.11.2022 | Despatch of a communication from the examining division (Time limit: M04) | 13.03.2023 | Reply to a communication from the examining division | Fees paid | Renewal fee | 15.11.2017 | Renewal fee patent year 03 | 12.06.2018 | Renewal fee patent year 04 | 13.06.2019 | Renewal fee patent year 05 | 15.06.2020 | Renewal fee patent year 06 | 14.06.2021 | Renewal fee patent year 07 | 26.05.2022 | Renewal fee patent year 08 | 29.05.2023 | Renewal fee patent year 09 | 30.05.2024 | Renewal fee patent year 10 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2008124878 (COOK TED E [US], et al) [A] 1-15 * Figs. 3, 5F, 8 and corresponding text *; | [A]US2013207166 (CHEN CHAO-HSUING [TW], et al) [A] 1-15 * Figs. 1, 5 and corresponding text. *; | [X]US2013240989 (GLASS GLENN A [US], et al) [X] 1,2,7-12 * Figs. 1-3 and corresponding text. *; | [X]US2013264639 (GLASS GLENN A [US], et al) [X] 1-10 * Figs. 1-3, 5A, 5B and corresponding text. *; | [X]US2015093868 (OBRADOVIC BORNA J [US], et al) [X] 1,2,7-12 * Figs. 1, 2, 10 and corresponding text. *; | [A]US2015137193 (CHENG KANGGUO [US], et al) [A] 1-15* Fig. 8 and corresponding text. * | International search | [A]US2011147828 (MURTHY ANAND S [US], et al) [A] 1-25 * See abstract, claims 1-42 and figures 1-15. *; | [XY]US2013240989 (GLASS GLENN A [US], et al) [X] 1, 4-16, 18-20 * See paragraph [0036], claims 1-15 and figures 3A-3C. * [Y] 2-3, 17, 21-25; | [Y]US2013264639 (GLASS GLENN A [US], et al) [Y] 2-3, 17, 21-25 * See paragraphs [0030]-[0049], claims 6, 25 and figures 3A-4G. *; | [A]US2015093868 (OBRADOVIC BORNA J [US], et al) [A] 1-25* See abstract and figures 1-13. *; | [A]US2015171193 (CHENG KANGGUO [US], et al) [A] 1-25 * See abstract, claims 1-20 and figures 1-8. * | by applicant | US2008124878 | US2013240989 | US2013264639 | US2015093868 |