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Extract from the Register of European Patents

EP About this file: EP3352225

EP3352225 - SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, ELECTRIC POWER CONVERTING DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE AND RAILWAY VEHICLE [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  30.08.2024
Database last updated on 19.10.2024
FormerThe patent has been granted
Status updated on  22.09.2023
FormerGrant of patent is intended
Status updated on  06.06.2023
FormerExamination is in progress
Status updated on  14.04.2023
FormerGrant of patent is intended
Status updated on  02.02.2023
FormerExamination is in progress
Status updated on  23.04.2021
FormerRequest for examination was made
Status updated on  22.06.2018
FormerThe international publication has been made
Status updated on  25.03.2017
Most recent event   Tooltip30.08.2024No opposition filed within time limitpublished on 02.10.2024  [2024/40]
Applicant(s)For all designated states
Hitachi, Ltd.
6-6, Marunouchi 1-chome
Chiyoda-ku
Tokyo 100-8280 / JP
[2018/30]
Inventor(s)01 / MORI, Yuki
c/o Hitachi, Ltd.
6-6 Marunouchi 1-chome
Chiyoda-ku
Tokyo 100-8280 / JP
02 / SHIMA, Akio
c/o Hitachi, Ltd.
6-6 Marunouchi 1-chome
Chiyoda-ku
Tokyo 100-8280 / JP
 [2018/30]
Representative(s)Mewburn Ellis LLP
Aurora Building
Counterslip
Bristol BS1 6BX / GB
[2023/43]
Former [2018/30]Gill, Stephen Charles, et al
Mewburn Ellis LLP
City Tower
40 Basinghall Street
London EC2V 5DE / GB
Application number, filing date15904057.515.09.2015
[2018/30]
WO2015JP76131
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2017046868
Date:23.03.2017
Language:JA
[2017/12]
Type: A1 Application with search report 
No.:EP3352225
Date:25.07.2018
Language:EN
[2018/30]
Type: B1 Patent specification 
No.:EP3352225
Date:25.10.2023
Language:EN
[2023/43]
Search report(s)International search report - published on:JP23.03.2017
(Supplementary) European search report - dispatched on:EP24.04.2019
ClassificationIPC:H01L29/78, H01L29/06, H01L21/336, H01L29/12
[2019/21]
CPC:
H01L29/7811 (EP,US); B60L15/00 (US); H01L21/0465 (EP,US);
H01L29/0615 (EP,US); H01L29/0623 (US); H01L29/063 (EP,US);
H01L29/0638 (EP,US); H01L29/1095 (US); H01L29/1608 (EP,US);
H01L29/167 (US); H01L29/66068 (EP,US); H01L29/7805 (US);
H02P27/06 (US); B60L2200/26 (US) (-)
Former IPC [2018/30]H01L29/78, H01L29/06, H01L29/861, H01L29/868
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2018/30]
TitleGerman:HALBLEITERBAUELEMENT, VERFAHREN ZUR HERSTELLUNG DAVON, STROMWANDLERVORRICHTUNG, DREHSTROMMOTORSYSTEM, FAHRZEUG UND SCHIENENFAHRZEUG[2018/30]
English:SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME, ELECTRIC POWER CONVERTING DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE AND RAILWAY VEHICLE[2018/30]
French:DISPOSITIF SEMICONDUCTEUR ET SON PROCÉDÉ DE FABRICATION, DISPOSITIF DE CONVERSION D'ÉNERGIE ÉLECTRIQUE, SYSTÈME DE MOTEUR TRIPHASÉ, AUTOMOBILE ET VÉHICULE FERROVIAIRE[2023/09]
Former [2018/30]DISPOSITIF SEMICONDUCTEUR ET SON PROCÉDÉ DE FABRICATION, DISPOSITIF DE CONVERSION D'ÉNEGRIE ÉLECTRIQUE, SYSTÈME DE MOTEUR TRIPHASÉ, AUTOMOBILE ET VÉHICULE FERROVIAIRE
Entry into regional phase07.03.2018Translation filed 
07.03.2018National basic fee paid 
07.03.2018Search fee paid 
07.03.2018Designation fee(s) paid 
07.03.2018Examination fee paid 
Examination procedure07.03.2018Examination requested  [2018/30]
07.03.2018Date on which the examining division has become responsible
09.07.2019Amendment by applicant (claims and/or description)
28.04.2021Despatch of a communication from the examining division (Time limit: M04)
18.06.2021Reply to a communication from the examining division
03.02.2023Communication of intention to grant the patent
13.04.2023Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
07.06.2023Communication of intention to grant the patent
08.08.2023Fee for grant paid
08.08.2023Fee for publishing/printing paid
08.08.2023Receipt of the translation of the claim(s)
Opposition(s)26.07.2024No opposition filed within time limit [2024/40]
Fees paidRenewal fee
07.03.2018Renewal fee patent year 03
25.09.2018Renewal fee patent year 04
11.09.2019Renewal fee patent year 05
23.09.2020Renewal fee patent year 06
16.09.2021Renewal fee patent year 07
22.09.2022Renewal fee patent year 08
19.09.2023Renewal fee patent year 09
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Lapses during opposition  TooltipAT25.10.2023
CZ25.10.2023
DK25.10.2023
EE25.10.2023
ES25.10.2023
HR25.10.2023
IT25.10.2023
LT25.10.2023
LV25.10.2023
NL25.10.2023
PL25.10.2023
RO25.10.2023
RS25.10.2023
SE25.10.2023
SK25.10.2023
SM25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
[2024/36]
Former [2024/35]AT25.10.2023
CZ25.10.2023
DK25.10.2023
EE25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
LV25.10.2023
NL25.10.2023
PL25.10.2023
RO25.10.2023
RS25.10.2023
SE25.10.2023
SM25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/34]AT25.10.2023
DK25.10.2023
EE25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
LV25.10.2023
NL25.10.2023
PL25.10.2023
RS25.10.2023
SE25.10.2023
SM25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/33]AT25.10.2023
DK25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
LV25.10.2023
NL25.10.2023
PL25.10.2023
RS25.10.2023
SE25.10.2023
SM25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/26]AT25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
LV25.10.2023
NL25.10.2023
PL25.10.2023
RS25.10.2023
SE25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/25]AT25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
NL25.10.2023
PL25.10.2023
RS25.10.2023
SE25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/24]AT25.10.2023
ES25.10.2023
HR25.10.2023
LT25.10.2023
NL25.10.2023
RS25.10.2023
SE25.10.2023
BG25.01.2024
NO25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/23]AT25.10.2023
ES25.10.2023
LT25.10.2023
NL25.10.2023
BG25.01.2024
GR26.01.2024
IS25.02.2024
PT26.02.2024
Former [2024/21]LT25.10.2023
NL25.10.2023
BG25.01.2024
GR26.01.2024
IS25.02.2024
Former [2024/20]NL25.10.2023
GR26.01.2024
IS25.02.2024
Former [2024/17]NL25.10.2023
Documents cited:Search[X]US2007272979  (SAITO WATARU [JP], et al) [X] 5,7 * paragraph [0070] - paragraph [0151]; figures 1-32 *;
 [A]EP1928013  (APPLIED MATERIALS INC [US]) [A] 6* paragraph [0047] *;
 [X]US2008290403  (ONO SYOTARO [JP], et al) [X] 5,7 * paragraph [0032] * * paragraph [0048] - paragraph [0055]; figure 5 * * paragraph [0070] *;
 [Y]US2012205669  (MIURA NARUHISA [JP], et al) [Y] 4,9,11 * paragraph [0030] - paragraph [0052]; figures 1-5 *;
 [Y]US2014103364  (NAKANO YUKI [JP], et al) [Y] 12-15 * paragraph [0034] - paragraph [0057]; figures 1,2 * * paragraph [0089] *;
 [XY]US2015021670  (SCHULZE HANS-JOACHIM [DE], et al) [X] 1,2,5,7,10 * paragraph [0037] - paragraph [0038] * * paragraph [0040] * * paragraph [0068] * * paragraph [0072] - paragraph [0073]; figure 4 * [Y] 4,9,11-15;
 [A]  - DEV ALOK ET AL, "SiC Device Edge Termination Using Finite Area Argon Implantation", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (19970601), vol. 44, no. 6, ISSN 0018-9383, XP011016163 [A] 3,8 * the whole document *
 [A]  - TIN C C ET AL, "Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes", SEMICONDUCTOR ELECTRONICS, 1996. ICSE '96. PROCEEDINGS., 1996 IEEE INT ERNATIONAL CONFERENCE ON PENANG, MALAYSIA 26-28 NOV. 1996, NEW YORK, NY, USA,IEEE, US, (19961126), doi:10.1109/SMELEC.1996.616451, ISBN 978-0-7803-3388-8, pages 55 - 58, XP010242207 [A] 3,8 * the whole document *

DOI:   http://dx.doi.org/10.1109/SMELEC.1996.616451
 [A]  - KNIGHTS A P ET AL, "Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, (20000415), vol. 87, no. 8, doi:10.1063/1.372443, ISSN 0021-8979, pages 3973 - 3977, XP012049844 [A] 3,8 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.372443
International search[YA]JP2005175161  (TOYOTA MOTOR CORP, et al) [Y] 1-4,12-15 * , paragraphs [0027] to [0029]; fig. 4, 7 (Family: none) * [A] 6,10,11;
 [YA]JP2009094433  (NAT INST OF ADV IND & TECHNOL, et al) [Y] 2,7 * , paragraph [0019] (Family: none) * [A] 6,10,11;
 [XYA]JP2012074441  (TOSHIBA CORP) [X] 5,9 * , paragraphs [0010] to [0026]; fig. 1 & US 2012/0074491 A1 paragraphs [0014] to [0039]; fig. 1 & US 2013/0277763 A1 & CN 102420249 A * [Y] 1-4,7,8, 12-15 [A] 6,10,11;
 [YA]WO2013100155  (FUJI ELECTRIC CO LTD [JP]) [Y] 3,8 * , paragraph [0029] & US 2014/0246755 A1 paragraph [0052] & EP 2800143 A1 *[A] 6,10,11
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.