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Extract from the Register of European Patents

EP About this file: EP3451364

EP3451364 - HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  01.01.2021
Database last updated on 29.07.2024
FormerThe patent has been granted
Status updated on  24.01.2020
FormerGrant of patent is intended
Status updated on  09.10.2019
FormerRequest for examination was made
Status updated on  01.02.2019
Most recent event   Tooltip15.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 17.08.2022  [2022/33]
Applicant(s)For all designated states
Siltronic AG
Hanns-Seidel-Platz 4
81737 München / DE
[2019/10]
Inventor(s)01 / THAPA, Sarad Bahadur
Brahmsstraße 11
84489 Burghausen / DE
02 / VORDERWESTNER, Martin
Wang 114
83567 Unterreit / DE
 [2019/10]
Representative(s)Staudacher, Wolfgang
Siltronic AG
Intellectual Property -LP 244
Johannes-Hess-Str. 24
84489 Burghausen / DE
[2019/10]
Application number, filing date17188124.628.08.2017
[2019/10]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3451364
Date:06.03.2019
Language:EN
[2019/10]
Type: B1 Patent specification 
No.:EP3451364
Date:26.02.2020
Language:EN
[2020/09]
Search report(s)(Supplementary) European search report - dispatched on:EP26.03.2018
ClassificationIPC:H01L21/20
[2019/10]
CPC:
H01L21/02381 (EP,KR,US); H01L21/02507 (EP,KR,US); H01L29/155 (US);
H01L21/02433 (EP,KR); H01L21/02458 (EP,KR,US); H01L21/02505 (EP);
H01L21/0254 (EP,KR,US); H01L21/0262 (US); H01L29/2003 (US);
H01L29/205 (US); H01L29/7786 (US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/44]
Former [2019/10]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:HETEROEPITAXIALWAFER UND VERFAHREN ZUR HERSTELLUNG EINES HETEROEPITAXIALWAFERS[2019/10]
English:HETEROEPITAXIAL WAFER AND METHOD FOR PRODUCING A HETEROEPITAXIAL WAFER[2019/10]
French:PLAQUETTE HÉTÉROEPITAXIALE ET PROCÉDÉ DE FABRICATION D'UNE PLAQUETTE HÉTÉROEPITAXIALE[2019/10]
Examination procedure11.09.2017Examination requested  [2019/10]
26.03.2018Date on which the examining division has become responsible
18.09.2019Despatch of communication that the application is deemed to be withdrawn, reason: designation fee not paid in time
10.10.2019Communication of intention to grant the patent
15.01.2020Fee for grant paid
15.01.2020Fee for publishing/printing paid
15.01.2020Receipt of the translation of the claim(s)
Opposition(s)27.11.2020No opposition filed within time limit [2021/05]
Request for further processing for:The application is deemed to be withdrawn due to non-payment of designation fees
TR, SM, SK, SI, SE, RS, RO, PT, PL, NO, NL, MT, MK, MC, LV, LU, LT, IT, IS, IE, HU, HR, GR, GB, FR, FI, ES, EE, DK, DE, CZ, CY, CH, BG, BE, AT, AL
20.09.2019Request for further processing filed
20.09.2019Full payment received (date of receipt of payment)
Request granted
08.10.2019Decision despatched
Fees paidRenewal fee
26.08.2019Renewal fee patent year 03
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU28.08.2017
AL26.02.2020
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
MK26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE28.08.2020
LU28.08.2020
CH31.08.2020
LI31.08.2020
[2022/31]
Former [2022/30]HU28.08.2017
AL26.02.2020
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE28.08.2020
LU28.08.2020
CH31.08.2020
LI31.08.2020
Former [2022/27]HU28.08.2017
CY26.02.2020
CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
MT26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
TR26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE28.08.2020
LU28.08.2020
CH31.08.2020
LI31.08.2020
Former [2021/37]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
IE28.08.2020
LU28.08.2020
CH31.08.2020
LI31.08.2020
Former [2021/20]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
LU28.08.2020
CH31.08.2020
LI31.08.2020
Former [2021/18]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
MC26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2021/13]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
PL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SI26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/50]CZ26.02.2020
DK26.02.2020
EE26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/49]CZ26.02.2020
DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SK26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/48]DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RO26.02.2020
RS26.02.2020
SE26.02.2020
SM26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
PT19.07.2020
Former [2020/47]DK26.02.2020
ES26.02.2020
FI26.02.2020
HR26.02.2020
LT26.02.2020
LV26.02.2020
NL26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/45]FI26.02.2020
HR26.02.2020
LV26.02.2020
NL26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/40]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
IS26.06.2020
Former [2020/39]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
BG26.05.2020
NO26.05.2020
GR27.05.2020
Former [2020/38]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
NO26.05.2020
GR27.05.2020
Former [2020/37]FI26.02.2020
HR26.02.2020
LV26.02.2020
RS26.02.2020
SE26.02.2020
NO26.05.2020
Former [2020/35]FI26.02.2020
NO26.05.2020
Documents cited:Search[A]US2011272665  (YAMAGUCHI ATSUSHI [JP], et al) [A] 1-14* figures 1,3-4,7; claim - *;
 [A]US2012161152  (MIYOSHI MAKOTO [JP], et al) [A] 1-14 * paragraphs [0057] - [0089] - [0098] - [0129]; figure 1 *;
 [A]US2013092953  (MIYOSHI MAKOTO [JP], et al) [A] 1-14 * paragraphs [0044] - [0074] - [0083] - [0100]; figure 1; example .; table 1 *;
 [A]EP2819152  (NGK INSULATORS LTD [JP]) [A] 1-14 * paragraphs [0055] - [0078]; figures 3-4 *
by applicantUS2014374771
    - "Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si", IEEE Electron Device Letters, (20111100), vol. 32, no. 11
    - S. STOFFELS et al., "The physical mechanism of dispersion caused by AIGaN/GaN buffers on Si and optimization for low dispersion", 2015 IEEE International Electron Devices Meeting (IEDM, (20150000), pages 35.4.1 - 35.4.4
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.