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Extract from the Register of European Patents

EP About this file: EP3469120

EP3469120 - HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPROVED MECHANICAL STRENGTH [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  09.12.2022
Database last updated on 07.10.2024
FormerThe patent has been granted
Status updated on  31.12.2021
FormerGrant of patent is intended
Status updated on  23.08.2021
FormerExamination is in progress
Status updated on  16.03.2020
FormerRequest for examination was made
Status updated on  15.03.2019
FormerThe international publication has been made
Status updated on  16.12.2017
Formerunknown
Status updated on  22.06.2017
Most recent event   Tooltip27.09.2024Lapse of the patent in a contracting state
New state(s): MT		published on 30.10.2024 [2024/44]
Applicant(s)For all designated states
GlobalWafers Co., Ltd.
No. 8 Industrial East Road 2
Science-Based Industrial Park
Hsinchu, Taiwan / TW
[2019/16]
Inventor(s)01 / BASAK, Soubir
501 Pearl Drive
St. Peters Missouri 63376 / US
02 / PEIDOUS, Igor
501 Pearl Drive
St. Peters Missouri 63376 / US
03 / HUDSON, Carissima Marie
501 Pearl Drive
St. Peters Missouri 63376 / US
04 / LEE, HyungMin
501 Pearl Drive
St. Peters Missouri 63376 / US
05 / KIM, ByungChun
501 Pearl Drive
St. Peters Missouri 63376 / US
06 / FALSTER, Robert J.
501 Pearl Drive
St. Peters Missouri 63376 / US
 [2019/16]
Representative(s)Parchmann, Stefanie
Maiwald GmbH
Elisenhof
Elisenstraße 3
80335 München / DE
[N/P]
Former [2019/16]Parchmann, Stefanie
Maiwald Patentanwalts- und
Rechtsanwaltsgesellschaft mbH
Elisenhof
Elisenstraße 3
80335 München / DE
Application number, filing date17729735.506.06.2017
[2019/16]
WO2017US36061
Priority number, dateUS201662347143P08.06.2016         Original published format: US 201662347143 P
US201662347145P08.06.2016         Original published format: US 201662347145 P
[2019/16]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2017214084
Date:14.12.2017
Language:EN
[2017/50]
Type: A1 Application with search report 
No.:EP3469120
Date:17.04.2019
Language:EN
The application published by WIPO in one of the EPO official languages on 14.12.2017 takes the place of the publication of the European patent application.
[2019/16]
Type: B1 Patent specification 
No.:EP3469120
Date:02.02.2022
Language:EN
[2022/05]
Search report(s)International search report - published on:EP14.12.2017
ClassificationIPC:C30B29/06, C30B15/30
[2019/16]
CPC:
C30B29/06 (EP,CN,KR,US); C30B15/007 (US); C30B15/10 (US);
C30B15/30 (CN); C30B15/305 (EP,KR,US); C30B30/04 (CN);
H01L21/02005 (US); H01L21/02123 (US); H01L21/28167 (US);
H01L31/0288 (CN) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2019/16]
Extension statesBANot yet paid
MENot yet paid
Validation statesMANot yet paid
MDNot yet paid
TitleGerman:HOCHOHMIGE MONOKRISTALLINE SILICIUMBARREN UND WAFER MIT VERBESSERTER MECHANISCHER FESTIGKEIT[2019/16]
English:HIGH RESISTIVITY SINGLE CRYSTAL SILICON INGOT AND WAFER HAVING IMPROVED MECHANICAL STRENGTH[2019/16]
French:LINGOT ET PLAQUETTE DE SILICIUM MONOCRISTALLIN À RÉSISTIVITÉ ÉLEVÉE PRÉSENTANT UNE RÉSISTANCE MÉCANIQUE AMÉLIORÉE[2019/16]
Entry into regional phase04.12.2018National basic fee paid 
04.12.2018Designation fee(s) paid 
04.12.2018Examination fee paid 
Examination procedure04.12.2018Examination requested  [2019/16]
04.12.2018Date on which the examining division has become responsible
17.06.2019Amendment by applicant (claims and/or description)
19.03.2020Despatch of a communication from the examining division (Time limit: M04)
07.07.2020Reply to a communication from the examining division
05.11.2020Despatch of a communication from the examining division (Time limit: M04)
19.02.2021Reply to a communication from the examining division
24.08.2021Communication of intention to grant the patent
20.12.2021Fee for grant paid
20.12.2021Fee for publishing/printing paid
20.12.2021Receipt of the translation of the claim(s)
Divisional application(s)EP21217094.8  / EP3995608
Opposition(s)03.11.2022No opposition filed within time limit [2023/02]
Fees paidRenewal fee
27.06.2019Renewal fee patent year 03
29.06.2020Renewal fee patent year 04
28.06.2021Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU06.06.2017
AL02.02.2022
AT02.02.2022
CY02.02.2022
CZ02.02.2022
DK02.02.2022
EE02.02.2022
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IS02.06.2022
PT02.06.2022
GB06.06.2022
IE06.06.2022
LU06.06.2022
BE30.06.2022
CH30.06.2022
LI30.06.2022
[2024/44]
Former [2024/29]HU06.06.2017
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BE30.06.2022
CH30.06.2022
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Cited inInternational search[A]US2004003769  (TAMATSUKA MASARO [JP], et al) [A] 1-16 * examples 1-2; claims 1-5 *;
 [X]US2016108551  (BASAK SOUBIR [US], et al) [X] 1-4,17-36 * the whole document *;
 [A]  - PORRINI M ET AL, "Growth of Large Diameter High Purity Silicon Single Crystals with the MCZ Method for Power Devices Applications", EPE-MADEP. MADEP SYMPOSIUM ON MATERIALS AND DEVICES FOR POWERELECTRONICS. EPE EUROPEAN CONFERENCE ON POWER ELECTRONICS ANDAPPLICATIONS. MADEP AND JOINT EPE-MADEP SESS, XX, XX, (19910902), pages 090 - 093, XP009104956 [A] 1-48 * the whole document *
ExaminationEP1087041
 JP2005306653
    - Tetsuo Fukuda ET AL, "Mechanical strength of silicon crystals with oxygen and/or germanium impurities", Applied Physics Letters, US, (19920309), vol. 60, no. 10, doi:10.1063/1.107399, ISSN 0003-6951, pages 1184 - 1186, XP055745724

DOI:   http://dx.doi.org/10.1063/1.107399
    - H-D CHIOU ET AL, "EFFECTS OF OXYGEN AND NITROGEN ON SLIP IN CZ SILICON WAFERS", EXTENDED ABSTRACTS,, (19840506), vol. 84, no. 1, XP001287240
by applicantUS5189500
 WO2014190165
    - J. CRY, Growth, (20020000), vol. 243, pages 371 - 374
    - H. S. GAMBLE et al., "Low-loss CPW lines on surface stabilized high resistivity silicon", Microwave Guided Wave Lett., (19990000), vol. 9, no. 10, doi:doi:10.1109/75.798027, pages 395 - 397, XP000865045

DOI:   http://dx.doi.org/10.1109/75.798027
    - D. LEDERER; R. LOBET; J.-P. RASKIN, "Enhanced high resistivity SOI wafers for RF applications", IEEE Intl. SOI Conf.,, (20040000), doi:doi:10.1109/SOI.2004.1391549, pages 46 - 47, XP010766840

DOI:   http://dx.doi.org/10.1109/SOI.2004.1391549
    - D. LEDERER; J.-P. RASKIN, "New substrate passivation method dedicated to high resistivity SOI wafer fabrication with increased substrate resistivity", IEEE Electron Device Letters, (20050000), vol. 26, no. 11, doi:doi:10.1109/LED.2005.857730, pages 805 - 807, XP011141447

DOI:   http://dx.doi.org/10.1109/LED.2005.857730
    - D. LEDERER et al, "Performance of RF passive structures and SOI MOSFETs transferred on a passivated HR SOI substrate", IEEE International SOI Conference, (20060000), pages 29 - 30
    - "Identification of RF harmonic distortion on Si substrates and its reduction using a trap-rich layer", DANIEL C; KERRET, Silicon Monolithic Integrated Circuits in RF Systems, IEEE Topical Meeting, (20080000), pages 151 - 154
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.