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Extract from the Register of European Patents

EP About this file: EP3688813

EP3688813 - MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR OVER A COMPLIMENTARY TRANSISTOR [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  03.07.2020
Database last updated on 19.10.2024
FormerThe international publication has been made
Status updated on  06.04.2019
Most recent event   Tooltip30.08.2024New entry: Renewal fee paid 
Applicant(s)For all designated states
INTEL Corporation
2200 Mission College Blvd.
Santa Clara, CA 95054 / US
[2020/32]
Inventor(s)01 / LE, Van H.
8779 SW Ravine Drive
Beaverton, OR 97007 / US
02 / RADOSAVLJEVIC, Marko
3684 NW Loriann
Portland, OR 97229 / US
03 / THEN, Han Wui
4191 NW 127th Avenue
Portland, OR 97229 / US
04 / RACHMADY, Willy
10945 SW Nutcracker Court
Beaverton, OR 97007 / US
05 / PILLARISETTY, Ravi
925 NW Hoyt Street
Apt. 226
Portland, OR 97209 / US
06 / SHARMA, Abhishek
1091 NE Orenco Station Parkway
E317
Hillsboro, OR 97124 / US
07 / DEWEY, Gilbert
920 SE 58th Avenue
Hillsboro, OR 97123 / US
08 / DASGUPTA, Sansaptak
132 NE Greenridge Terrace
Hillsboro, OR 97124 / US
 [2020/40]
Former [2020/32]01 / LE, Van H.
5625 NW Peregrine Pl.
Portland, OR 97229 / US
02 / RADOSAVLJEVIC, Marko
3684 NW Loriann
Portland, OR 97229 / US
03 / THEN, Han Wui
4191 NW 127th Avenue
Portland, OR 97229 / US
04 / RACHMADY, Willy
10945 SW Nutcracker Court
Beaverton, OR 97007 / US
05 / PILLARISETTY, Ravi
925 NW Hoyt Street
Apt. 226
Portland, OR 97209 / US
06 / SHARMA, Abhishek
1091 NE Orenco Station Parkway
E317
Hillsboro, OR 97124 / US
07 / DEWEY, Gilbert
920 SE 58th Avenue
Hillsboro, OR 97123 / US
08 / DASGUPTA, Sansaptak
132 NE Greenridge Terrace
Hillsboro, OR 97124 / US
Representative(s)HGF
HGF Limited
1 City Walk
Leeds LS11 9DX / GB
[N/P]
Former [2020/32]HGF
1 City Walk
Leeds LS11 9DX / GB
Application number, filing date17927294.328.09.2017
[2020/32]
WO2017US54144
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2019066872
Date:04.04.2019
Language:EN
[2019/14]
Type: A1 Application with search report 
No.:EP3688813
Date:05.08.2020
Language:EN
The application published by WIPO in one of the EPO official languages on 04.04.2019 takes the place of the publication of the European patent application.
[2020/32]
Search report(s)International search report - published on:KR04.04.2019
(Supplementary) European search report - dispatched on:EP27.05.2021
ClassificationIPC:H01L29/778, H01L29/66, H01L27/088, H01L21/8258, H01L27/12, H01L29/786, H01L27/06, H01L29/24, // H01L29/08
[2021/25]
CPC:
H01L29/7786 (EP,US); H01L27/0922 (US); H01L21/8258 (EP,US);
H01L27/0688 (EP); H01L27/0883 (EP,US); H01L27/1203 (EP);
H01L27/1225 (EP); H01L29/2003 (US); H01L29/205 (US);
H01L29/242 (EP); H01L29/66462 (US); H01L29/66969 (EP,US);
H01L29/7869 (EP,US); H01L29/0847 (EP); H01L29/24 (EP) (-)
Former IPC [2020/32]H01L29/778, H01L29/66
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/32]
TitleGerman:MONOLITHISCHE INTEGRATION EINES DÜNNFILMTRANSISTORS ÜBER EINEN KOMPLEMENTÄREN TRANSISTOR[2020/32]
English:MONOLITHIC INTEGRATION OF A THIN FILM TRANSISTOR OVER A COMPLIMENTARY TRANSISTOR[2020/32]
French:INTÉGRATION MONOLITHIQUE D'UN TRANSISTOR À FILM MINCE SUR UN TRANSISTOR COMPLÉMENTAIRE[2020/32]
Entry into regional phase17.01.2020National basic fee paid 
17.01.2020Search fee paid 
17.01.2020Designation fee(s) paid 
17.01.2020Examination fee paid 
Examination procedure17.01.2020Examination requested  [2020/32]
05.11.2021Amendment by applicant (claims and/or description)
Fees paidRenewal fee
17.01.2020Renewal fee patent year 03
14.09.2020Renewal fee patent year 04
13.09.2021Renewal fee patent year 05
26.08.2022Renewal fee patent year 06
29.08.2023Renewal fee patent year 07
29.08.2024Renewal fee patent year 08
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XI]US2014091366  (JEON WOO-CHUL [KR], et al) [X] 1,5,7-9,12,13 * paragraphs [0095] - [0097] - [ 151]; figure 9 * [I] 14;
 [XI]US2015325708  (YAKUBO YUTO [JP], et al) [X] 7,8,11,12,15 * paragraphs [0064] , [ 178] , [ 213] , [ 215] , [ 223]; figures 8H, 9 * [I] 1-6,9,10,13,14;
 [A]JP2016009774  (RENESAS ELECTRONICS CORP) [A] 1-15* paragraphs [0016] , [0 71] , [0 74]; figure 15 *;
 [XI]WO2017142482  (MASSACHUSETTS INST TECHNOLOGY [US], et al) [X] 7,8,12 * page 4, line 30 - line 37; figure 5 * * page 6, line 17 - line 20; figure 8 * [I] 13,14;
 [IA]  - SCHUETTE MICHAEL L ET AL, "Heterogeneous integration of low-temperature metal-oxide TFTs", PROCEEDINGS OF SPIE; [PROCEEDINGS OF SPIE ISSN 0277-786X VOLUME 10524], SPIE, US, (20170224), vol. 10105, doi:10.1117/12.2256188, ISBN 978-1-5106-1533-5, pages 1010512 - 1010512, XP060085366 [I] 7,8,10,12-14 * sections 3, 4;; figures 2, 3 * [A] 4

DOI:   http://dx.doi.org/10.1117/12.2256188
International search[A]US2008080221  (KOO JAE BON [KR], et al) [A] 1-22 * See claim 1 and figures 1-3B. *;
 [A]JP2015165579  (SEMICONDUCTOR ENERGY LAB) [A] 1-22 * See paragraphs [0028]-[0038] and figure 1. *;
 [XY]US2016133627  (HIRLER FRANZ [DE]) [X] 1-10, 13-17, 20-22 * See paragraphs [0022]-[0059], claim 1 and figures la-4. * [Y] 11, 12, 18, 19;
 [A]US2017033187  (RAJAN SIDDHARTH [US], et al) [A] 1-22* See figures 1-2. *;
 [Y]US2017125562  (PRECHTL GERHARD [AT], et al) [Y] 11, 12, 18, 19 * See paragraphs [0025]-[0027], claim 10 and figure 1. *
by applicantUS2014091366
 US2015325708
 WO2017142482
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.