blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News flashes

New version of the European Patent Register - SPC information for Unitary Patents.

2024-03-06

More...
blank Related links

Extract from the Register of European Patents

EP About this file: EP3660932

EP3660932 - CHALCOGENIDE MEMORY DEVICE SELECTOR COMPONENT AND COMPOSITION [Right-click to bookmark this link]
StatusExamination is in progress
Status updated on  18.06.2021
Database last updated on 15.06.2024
FormerRequest for examination was made
Status updated on  01.05.2020
Most recent event   Tooltip24.11.2023New entry: Renewal fee paid 
Applicant(s)For all designated states
Micron Technology, Inc.
8000 S. Federal Way
P.O. Box 6
Boise, ID 83707 / US
[2020/23]
Inventor(s)01 / FANTINI, Paolo
8000 S. Federal Way
Boise, ID Idaho 83716-9632 / US
02 / GEALY, F. Daniel
8000 S. Federal Way
Boise, ID Idaho 83716-9632 / US
03 / VARESI, Enrico
8000 S. Federal Way
Boise, ID Idaho 83716-9632 / US
04 / LENGADE, Swapnil A.
8000 S. Federal Way
Boise, ID Idaho 83716-9632 / US
 [2020/23]
Representative(s)Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
[N/P]
Former [2020/23]Granleese, Rhian Jane
Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
Application number, filing date18209507.530.11.2018
[2020/23]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP3660932
Date:03.06.2020
Language:EN
[2020/23]
Search report(s)(Supplementary) European search report - dispatched on:EP03.06.2019
ClassificationIPC:H01L45/00, H01L27/24
[2020/23]
CPC:
C01B19/002 (EP); H10B63/24 (EP); H10B63/80 (EP);
H10N70/20 (EP); H10N70/826 (EP); H10N70/8825 (EP);
G11C11/221 (EP); G11C13/0004 (EP); G11C2213/76 (EP) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/23]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:AUSWAHLBAUELEMENT UND ZUSAMMENSETZUNG FÜR CHALCOGENID-SPEICHERVORRICHTUNG[2020/23]
English:CHALCOGENIDE MEMORY DEVICE SELECTOR COMPONENT AND COMPOSITION[2020/23]
French:COMPOSANT ET COMPOSITION D'UN SÉLECTEUR DE DISPOSITIF DE MÉMOIRE À CHALCOGÉNURE[2020/23]
Examination procedure30.11.2018Examination requested  [2020/23]
03.12.2020Amendment by applicant (claims and/or description)
22.06.2021Despatch of a communication from the examining division (Time limit: M04)
29.10.2021Reply to a communication from the examining division
09.06.2023Despatch of a communication from the examining division (Time limit: M04)
19.10.2023Reply to a communication from the examining division
Fees paidRenewal fee
27.11.2020Renewal fee patent year 03
25.11.2021Renewal fee patent year 04
24.11.2022Renewal fee patent year 05
24.11.2023Renewal fee patent year 06
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court
See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]EP0196891  (RAYCHEM LTD [GB]) [X] 1-3,5-9 * column 7, lines 3-26; example 28 * [Y] 4;
 [Y]US9379321  (CHANG KUO-WEI [US], et al) [Y] 4,13* column 2, line 14 - column 3, line 29; figures 1, 2 *;
 [XY]US2018277601  (AHN DONG-HO [KR], et al) [X] 1-3,5-12 * paragraphs [0041] - [0058] - [0067] - [0069] - [0136]; figures 1-4 * [Y] 4,13;
 [X]  - SHIRYAEV V S ET AL, "Preparation of high purity glasses in the Ga-Ge-As-Se system", OPTICAL MATERIALS, (20140516), vol. 37, doi:10.1016/J.OPTMAT.2014.04.021, ISSN 0925-3467, pages 18 - 23, XP029082584 [X] 1,2,5-7 * abstract *

DOI:   http://dx.doi.org/10.1016/j.optmat.2014.04.021
 [X]  - KOTKATA M F ET AL, "The effect of Tl addition on the electrical and thermal transport properties of amorphous As2Se3", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (198611), vol. 1, no. 5, doi:10.1088/0268-1242/1/5/006, ISSN 0268-1242, pages 313 - 319, XP020031517 [X] 1,5-7 * section 2;; table 1 *

DOI:   http://dx.doi.org/10.1088/0268-1242/1/5/006
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.