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Extract from the Register of European Patents

EP About this file: EP3680940

EP3680940 - SEMICONDUCTOR WAFER MANUFACTURING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR ENERGY BEAM DETECTING ELEMENT, AND SEMICONDUCTOR WAFER [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  12.06.2020
Database last updated on 14.09.2024
FormerThe international publication has been made
Status updated on  16.03.2019
Most recent event   Tooltip13.08.2024New entry: Renewal fee paid 
Applicant(s)For all designated states
Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
[2020/29]
Inventor(s)01 / KOSUGI, Kazumasa
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
02 / KAMADA, Shintaro
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
03 / YAMAMURA, Kazuhisa
c/o Hamamatsu Photonics K.K.
1126-1, Ichino-cho
Higashi-ku
Hamamatsu-shi, Shizuoka 435-8558 / JP
 [2020/29]
Representative(s)Hoffmann Eitle
Patent- und Rechtsanwälte PartmbB
Arabellastraße 30
81925 München / DE
[2020/29]
Application number, filing date18854988.505.09.2018
[2020/29]
WO2018JP32912
Priority number, dateJP2017017304908.09.2017         Original published format: JP 2017173049
[2020/29]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2019049900
Date:14.03.2019
Language:JA
[2019/11]
Type: A1 Application with search report 
No.:EP3680940
Date:15.07.2020
Language:EN
[2020/29]
Search report(s)International search report - published on:JP14.03.2019
(Supplementary) European search report - dispatched on:EP12.04.2021
ClassificationIPC:H01L31/103, H01L31/18, H01L31/118
[2021/19]
CPC:
H01L31/103 (EP); H01L31/02363 (US); G01T1/242 (EP);
H01L27/1446 (EP); H01L31/115 (US); H01L31/1185 (EP);
H01L31/1804 (EP); H01L31/1876 (US); Y02P70/50 (EP) (-)
Former IPC [2020/29]H01L31/10, H01L31/08
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/29]
TitleGerman:HALBLEITERWAFERHERSTELLUNGSVERFAHREN, VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERENERGIESTRAHLERDETEKTIONSELEMENTS UND HALBLEITERWAFER[2020/29]
English:SEMICONDUCTOR WAFER MANUFACTURING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR ENERGY BEAM DETECTING ELEMENT, AND SEMICONDUCTOR WAFER[2020/29]
French:PROCÉDÉ DE FABRICATION DE TRANCHE SEMI-CONDUCTRICE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE DÉTECTION DE FAISCEAU D'ÉNERGIE DE SEMI-CONDUCTEUR, ET TRANCHE SEMI-CONDUCTRICE[2020/29]
Entry into regional phase09.03.2020Translation filed 
09.03.2020National basic fee paid 
09.03.2020Search fee paid 
09.03.2020Designation fee(s) paid 
09.03.2020Examination fee paid 
Examination procedure09.03.2020Examination requested  [2020/29]
27.10.2021Amendment by applicant (claims and/or description)
Fees paidRenewal fee
31.03.2020Renewal fee patent year 03
15.09.2021Renewal fee patent year 04
11.08.2022Renewal fee patent year 05
24.08.2023Renewal fee patent year 06
13.08.2024Renewal fee patent year 07
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Documents cited:Search[A]US6333457  (MULLIGAN WILLIAM P [US], et al) [A] 1-6 * abstract * * column 2, line 29 - column 3, line 67 ** figure 1 *;
 [X]WO2016114377  (SHIZUKUISHI MAKOTO [JP]) [X] 1-6 * abstract * * paragraphs [0023] , [0024] , [0037] - [0044] * * figures 1,2 *
International search[A]JP2005533587  [A] 1-6 * , I *;
 [A]JP2010239005  (UNIV KINKI, et al) [A] 1-6 * , *;
 [A]US2012235262  (JONES CHRISTOPHER [GB], et al) [A] 1-6* , & WO 2011/067058 A1 *;
 [A]JP2014220403  (HAMAMATSU PHOTONICS KK) [A] 1-6 * , & WO 2014/181665 A1 *;
 [A]JP2015050223  (HAMAMATSU PHOTONICS KK) [A] 1-6 * , & WO 2015/029705 A1 *;
 [A]JP2017034288  (HAMAMATSU PHOTONICS KK) [A] 1-6 * , *
by applicantJP2015019540
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.