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Extract from the Register of European Patents

EP About this file: EP3762963

EP3762963 - FINFET TECHNOLOGY USING DEEP ISOLATION [Right-click to bookmark this link]
StatusExamination is in progress
Status updated on  23.06.2022
Database last updated on 02.09.2024
FormerRequest for examination was made
Status updated on  11.12.2020
FormerThe international publication has been made
Status updated on  14.09.2019
Formerunknown
Status updated on  19.03.2019
Most recent event   Tooltip26.02.2024New entry: Renewal fee paid 
Applicant(s)For all designated states
Xilinx, Inc.
2100 Logic Drive
San Jose, California 95124 / US
[2021/02]
Inventor(s)01 / KARP, James
2100 Logic Drive
San Jose, CA 95124 / US
02 / HART, Michael, J.
2100 Logic Drive
San Jose, CA 95124 / US
 [2021/02]
Representative(s)Zimmermann & Partner Patentanwälte mbB
Postfach 330 920
80069 München / DE
[2021/02]
Application number, filing date19709594.614.02.2019
[2021/02]
WO2019US18067
Priority number, dateUS20181591720609.03.2018         Original published format: US201815917206
[2021/02]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2019173033
Date:12.09.2019
Language:EN
[2019/37]
Type: A1 Application with search report 
No.:EP3762963
Date:13.01.2021
Language:EN
The application published by WIPO in one of the EPO official languages on 12.09.2019 takes the place of the publication of the European patent application.
[2021/02]
Search report(s)International search report - published on:EP12.09.2019
ClassificationIPC:H01L21/8238, H01L21/762, H01L27/092
[2021/02]
CPC:
H01L27/0921 (EP,KR,US); H01L21/823878 (EP,KR,US); H01L29/0649 (US);
H01L21/76224 (US); H01L21/76229 (EP,KR,US); H01L21/823821 (EP,KR,US);
H01L27/0924 (EP,KR,US); H01L29/66795 (US); H01L29/785 (US);
H01L21/823892 (EP,KR,US); H01L27/0928 (EP,KR,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2021/02]
TitleGerman:FINFET-TECHNOLOGIE MIT TIEFENISOLIERUNG[2021/02]
English:FINFET TECHNOLOGY USING DEEP ISOLATION[2021/02]
French:TECHNOLOGIE FINFET UTILISANT UNE ISOLATION PROFONDE[2021/02]
Entry into regional phase09.10.2020National basic fee paid 
09.10.2020Designation fee(s) paid 
09.10.2020Examination fee paid 
Examination procedure07.01.2020Request for preliminary examination filed
International Preliminary Examining Authority: EP
09.10.2020Examination requested  [2021/02]
09.10.2020Date on which the examining division has become responsible
23.04.2021Amendment by applicant (claims and/or description)
22.06.2022Despatch of a communication from the examining division (Time limit: M04)
21.10.2022Reply to a communication from the examining division
Fees paidRenewal fee
19.02.2021Renewal fee patent year 03
17.02.2022Renewal fee patent year 04
22.02.2023Renewal fee patent year 05
24.02.2024Renewal fee patent year 06
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Cited inInternational search[Y]US4683488  (LEE WILLIAM W Y [US], et al);
 [XYI]US2008029821  (YAMAGAMI SHIGEHARU [JP], et al);
 [XY]US2015060959  (LIN YI-TANG [TW], et al);
 [IY]US2015311201  (JU JIANHUA [CN], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.