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EP3900018
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EP About this file: EP3900018
| EP3900018 - PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT BASED ON A III-N COMPOUND [Right-click to bookmark this link] | Status | Grant of patent is intended Status updated on 07.08.2024 Database last updated on 31.08.2024 | |
| Former | Request for examination was made Status updated on 24.09.2021 | ||
| Former | The international publication has been made Status updated on 02.07.2020 | ||
| Former | unknown Status updated on 18.02.2020 | Most recent event Tooltip | 07.08.2024 | New entry: Communication of intention to grant a patent | Applicant(s) | For all designated states Commissariat à l'Energie Atomique et aux Energies Alternatives Bâtiment "Le Ponant D" 25, rue Leblanc 75015 Paris / FR | [2021/43] | Inventor(s) | 01 /
ROTTNER, Jean c/o CEA GRENOBLE 17 Rue des Martyrs 38054 GRENOBLE CEDEX 9 / FR | 02 /
HAAS, Helge c/o CEA GRENOBLE 17 Rue des Martyrs 38054 GRENOBLE CEDEX 9 / FR | [2021/43] | Representative(s) | Cabinet Beaumont 4, Place Robert Schuman B.P. 1529 38025 Grenoble Cedex 1 / FR | [2021/43] | Application number, filing date | 19848875.1 | 18.12.2019 | [2021/43] | WO2019FR53174 | Priority number, date | FR20180073668 | 20.12.2018 Original published format: FR 1873668 | [2021/43] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | WO2020128339 | Date: | 25.06.2020 | Language: | FR | [2020/26] | Type: | A1 Application with search report | No.: | EP3900018 | Date: | 27.10.2021 | Language: | FR | The application published by WIPO in one of the EPO official languages on 25.06.2020 takes the place of the publication of the European patent application. | [2021/43] | Search report(s) | International search report - published on: | EP | 25.06.2020 | Classification | IPC: | H01L21/02, H01L21/28, H01L29/78, H01L33/38, H01L29/20, H01L21/285, H01L29/66, H01L33/40 | [2021/43] | CPC: |
H01L21/0206 (EP,KR,US);
H01L29/66666 (EP,KR);
H01L33/32 (US);
H01L21/28587 (EP,KR);
H01L29/2003 (EP,KR,US);
H01L29/66522 (EP);
H01L29/7827 (EP,KR);
H01L33/0075 (US);
H01L33/0095 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2021/43] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS AUF DER BASIS EINER III-N-VERBINDUNG | [2021/43] | English: | PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT BASED ON A III-N COMPOUND | [2021/43] | French: | PROCEDE DE FABRICATION D'UN COMPOSANT SEMICONDUCTEUR A BASE D'UN COMPOSE III-N | [2021/43] | Entry into regional phase | 21.06.2021 | National basic fee paid | 21.06.2021 | Designation fee(s) paid | 21.06.2021 | Examination fee paid | Examination procedure | 21.06.2021 | Examination requested [2021/43] | 21.06.2021 | Date on which the examining division has become responsible | 23.11.2021 | Amendment by applicant (claims and/or description) | 08.08.2024 | Communication of intention to grant the patent | Fees paid | Renewal fee | 30.11.2021 | Renewal fee patent year 03 | 21.12.2022 | Renewal fee patent year 04 | 28.12.2023 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [A]US2013161705 (DISNEY DON [US], et al); | [A]EP2642533 (STANLEY ELECTRIC CO LTD [JP]); | [XAI]US2016322538 (EINFELDT SVEN [DE], et al) | by applicant | FR20180073668 |