EP3944325 - MAGNETO RESISTIVE MEMORY DEVICE [Right-click to bookmark this link] | Status | Grant of patent is intended Status updated on 30.06.2023 Database last updated on 26.06.2024 | |
Former | The patent has been granted Status updated on 19.05.2023 | ||
Former | Grant of patent is intended Status updated on 06.03.2023 | ||
Former | Request for examination was made Status updated on 20.05.2022 | ||
Former | The application has been published Status updated on 24.12.2021 | Most recent event Tooltip | 30.06.2023 | Interruption | published on 02.08.2023 [2023/31] | 30.06.2023 | Change or deletion - publication of B1 document | published on 02.08.2023 [2023/31] | Applicant(s) | For all designated states Antaios 35 Chemin du Vieux Chêne 38240 Meylan / FR | [2022/04] | Inventor(s) | 01 /
DROUARD, Marc 26000 VALENCE / FR | [2022/04] | Representative(s) | (deleted) | [N/P] |
Former [2022/04] | IP Trust 2, rue de Clichy 75009 Paris / FR | Application number, filing date | 20315358.0 | 23.07.2020 | [2022/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3944325 | Date: | 26.01.2022 | Language: | EN | [2022/04] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.01.2021 | Classification | IPC: | H10B61/00, H10N50/10, H10N50/80, H10N50/85, G11C11/16 | [2023/12] | CPC: |
G11C11/18 (EP);
G11C11/161 (EP,CN);
H10N52/80 (US);
G11C11/1675 (EP);
H10B61/00 (EP,US);
H10B61/20 (EP);
H10N50/10 (EP);
H10N50/80 (EP);
H10N50/85 (EP,US);
H10N52/00 (US)
(-)
|
Former IPC [2022/04] | H01L27/22, H01L43/02, H01L43/08, H01L43/10, G11C11/02 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/25] |
Former [2022/04] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Title | German: | MAGNETORESISTIVE SPEICHERVORRICHTUNG | [2022/04] | English: | MAGNETO RESISTIVE MEMORY DEVICE | [2022/04] | French: | DISPOSITIF DE MÉMOIRE MAGNÉTORÉSISTIF | [2022/04] | Examination procedure | 16.05.2022 | Examination requested [2022/25] | 16.05.2022 | Date on which the examining division has become responsible | 07.03.2023 | Communication of intention to grant the patent | 11.05.2023 | Fee for grant paid | 11.05.2023 | Fee for publishing/printing paid | 11.05.2023 | Receipt of the translation of the claim(s) | Fees paid | Renewal fee | 27.07.2022 | Renewal fee patent year 03 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Stay/Interruption | 07.06.2023 | Interruption of proceedings. Reason: legal prevention of applicant | [2023/31] | Documents cited: | Search | [A]US2015129995 (WANG KANG L [US], et al) [A] 1-15* paragraphs [0036] - [0084]; figures 1-4 *; | [A]US2016300999 (YI GE [US], et al) [A] 1-15 * pages 28-44; figures 1-4 *; | [A]US2020098410 (GOSAVI TANAY [US], et al) [A] 1-15 * paragraphs [0094] - [0136]; figures 4-9 * |