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EP3965142
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EP About this file: EP3965142
| EP3965142 - ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 02.04.2022 Database last updated on 20.05.2024 | |
| Former | The application has been published Status updated on 04.02.2022 | Most recent event Tooltip | 26.02.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 129, Samsung-ro Yeongtong-gu Gyeonggi-do Suwon-si 16677 / KR | [2022/10] | Inventor(s) | 01 /
SONG, Jeonggyu 16678, Gyeonggi-do / KR | 02 /
KIM, Younsoo 16678, Gyeonggi-do / KR | 03 /
LEE, Jooho 16678, Gyeonggi-do / KR | 04 /
HAN, Narae 16678, Gyeonggi-do / KR | [2022/10] | Representative(s) | Elkington and Fife LLP Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | [2022/10] | Application number, filing date | 21161520.8 | 09.03.2021 | [2022/10] | Priority number, date | KR20200111687 | 02.09.2020 Original published format: KR 20200111687 | [2022/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3965142 | Date: | 09.03.2022 | Language: | EN | [2022/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.09.2021 | Classification | IPC: | H01L21/02, H01L27/108, H01L49/02 | [2022/10] | CPC: |
H01L28/40 (EP,CN,KR);
H01L28/56 (US);
H01L21/02148 (EP);
H01L21/02175 (KR);
H01L21/022 (KR);
H01L28/60 (US);
H10B12/03 (EP);
H10B12/30 (CN,KR);
H10B12/315 (EP,US);
H10B12/34 (US)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/18] |
| Former [2022/10] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | ELEKTRISCHE VORRICHTUNG UND HALBLEITERBAUELEMENT DAMIT | [2022/10] | English: | ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | [2022/10] | French: | DISPOSITIF ÉLECTRIQUE ET APPAREIL À SEMI-CONDUCTEUR LE COMPRENANT | [2022/10] | Examination procedure | 29.03.2022 | Examination requested [2022/18] | 29.03.2022 | Date on which the examining division has become responsible | 19.08.2022 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 27.02.2023 | Renewal fee patent year 03 | 26.02.2024 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP0076456 (TAIYO YUDEN KK [JP]) [X] 1-7,9,11,13-15 * page 1 - page 110; figures 1, 2; tables 1-18 * [A] 8,10,12; | [A]US2008054400 (LEE WOO-SUNG [KR], et al) [A] 1-15 * the whole document *; | [A]CN110098052 (UNIV HUBEI, et al) [A] 1-15 * paragraph [0005] - paragraph [0057]; figures 1,2 *; | [A] - HSIANG H I ET AL, "Sintering behavior and dielectric properties of BaTiO"3 ceramics with glass addition for internal capacitor of LTCC", JOURNAL OF ALLOYS AND COMPOUNDS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 459, no. 1-2, doi:10.1016/J.JALLCOM.2007.04.218, ISSN 0925-8388, (20080714), pages 307 - 310, (20080520), XP022673438 [A] 1-15 * abstract * DOI: http://dx.doi.org/10.1016/j.jallcom.2007.04.218 | [A] - SYAMAPRASAD U ET AL, "MULTILAYER CAPACITOR CERAMICS IN THE PMN-PT-BT SYSTEM: EFFECT OF MGO AND 4PBO.B2O3 ADDITIONS", JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS, CHAPMAN AND HALL, LONDON, GB, (19970601), vol. 8, no. 3, doi:10.1023/A:1018554431950, ISSN 0957-4522, pages 199 - 205, XP000723849 [A] 1-15 * the whole document * DOI: http://dx.doi.org/10.1023/A:1018554431950 |