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EP4015447
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EP About this file: EP4015447
| EP4015447 - INTEGRATED CIRCUIT STRUCTURES HAVING BORON-DOPED GESN SOURCE OR DRAIN STRUCTURES [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 18.11.2022 Database last updated on 24.08.2024 | |
| Former | The application has been published Status updated on 20.05.2022 | Most recent event Tooltip | 29.08.2023 | New entry: Renewal fee paid | Applicant(s) | For all designated states INTEL Corporation 2200 Mission College Blvd. Santa Clara, CA 95054 / US | [2022/25] | Inventor(s) | 01 /
Paul, Rajat Portland, 97229 / US | 02 /
Rachmady, Willy Beaverton, 97007 / US | 03 /
Torres, Jessica Portland, 97229 / US | 04 /
Nahm, Rambert Beaverton, 97006 / US | 05 /
Agrawal, Ashish Beaverton, 97006 / US | 06 /
Chouksey, Siddharth Portland, 97229 / US | 07 /
Dewey, Gilbert Beaverton, 97006 / US | 08 /
Kavalieros, Jack T. Portland, 97229 / US | [2022/25] | Representative(s) | Goddar, Heinz J. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [2022/25] | Application number, filing date | 21195923.4 | 10.09.2021 | [2022/25] | Priority number, date | US202017122907 | 15.12.2020 Original published format: US202017122907 | [2022/25] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4015447 | Date: | 22.06.2022 | Language: | EN | [2022/25] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.03.2022 | Classification | IPC: | B82Y10/00, H01L29/06, H01L29/08, H01L29/167, H01L29/66, H01L29/775, H01L29/78 | [2022/25] | CPC: |
H01L29/0673 (EP,US);
H01L29/7848 (EP,US);
B82Y10/00 (EP);
H01L27/1207 (US);
H01L29/0847 (EP,US);
H01L29/165 (US);
H01L29/167 (EP,US);
H01L29/66439 (EP);
H01L29/66742 (US);
H01L29/66787 (US);
H01L29/775 (EP);
H01L29/42392 (US);
H01L29/78696 (US)
(-)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/51] |
| Former [2022/25] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | INTEGRIERTE SCHALTUNGSSTRUKTUREN MIT BOR-DOTIERTEN GESN SOURCE- ODER DRAIN-STRUKTUREN | [2022/25] | English: | INTEGRATED CIRCUIT STRUCTURES HAVING BORON-DOPED GESN SOURCE OR DRAIN STRUCTURES | [2022/25] | French: | STRUCTURES DE CIRCUITS INTÉGRÉS AYANT UNE STRUCTURE SOURCE OU DRAIN EN GESN DOPÉE AVEC DU BORE | [2022/25] | Examination procedure | 16.11.2022 | Amendment by applicant (claims and/or description) | 16.11.2022 | Examination requested [2022/51] | 16.11.2022 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 29.08.2023 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2014091279 (KACHIAN JESSICA S [US], et al) [A] 1-15* Figs. 4, 5 and corresponding text. *; | [X]US2016111494 (CHENG KANGGUO [US], et al) [X] 1-4,6,9-12,14 * Fig. 2 and corresponding text.; paragraph [0028] *; | [A]US10535735 (GLASS GLENN A [US], et al) [A] 1-15 * Fig. 5 and corresponding text. *; | [X]US2020312960 (BOMBERGER CORY [US], et al) [X] 1,5,7-10,13,15 * Fig. 4 and corresponding text. *; | [X] - LOO R ET AL, "Epitaxial Growth of (Si)GeSn Source/Drain Layers for Advanced Ge Gate All Around Devices", 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), IEEE, (20190519), doi:10.1109/ICIPRM.2019.8818998, pages 1 - 2, XP033609589 [X] 1,5,6,8,10,13,14 * the whole document * DOI: http://dx.doi.org/10.1109/ICIPRM.2019.8818998 | [A] - ARIMURA H ET AL, "Toward high-performance and reliable Ge channel devices for 2 nm node and beyond", 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, (20201212), doi:10.1109/IEDM13553.2020.9372007, XP033886095 [A] 1-15 * Figs. 7, 8, 10 and corresponding text. * DOI: http://dx.doi.org/10.1109/IEDM13553.2020.9372007 |