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Extract from the Register of European Patents

EP About this file: EP4199112

EP4199112 - A METHOD FOR FORMING A SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  22.12.2023
Database last updated on 28.06.2024
FormerThe application has been published
Status updated on  19.05.2023
Most recent event   Tooltip22.12.2023The date on which the examining division becomes responsible, has been established 
22.12.2023Request for examination filedpublished on 24.01.2024  [2024/04]
22.12.2023Change - designated statespublished on 24.01.2024  [2024/04]
22.12.2023Amendment by applicant 
Applicant(s)For all designated states
IMEC VZW
Kapeldreef 75
3001 Leuven / BE
[2023/25]
Inventor(s)01 / CHAN, Boon Teik
3012 Wilsele / BE
02 / VANDOOREN, Anne
5032 Mazy / BE
03 / RYCKAERT, Julien
1030 Schaerbeek / BE
04 / HORIGUCHI, Naoto
3000 Leuven / BE
 [2023/25]
Representative(s)AWA Sweden AB
Box 5117
200 71 Malmö / SE
[2023/25]
Application number, filing date21215370.417.12.2021
[2023/25]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP4199112
Date:21.06.2023
Language:EN
[2023/25]
Search report(s)(Supplementary) European search report - dispatched on:EP25.08.2022
ClassificationIPC:H01L29/775, H01L27/092, H01L21/336, H01L21/8238, H01L21/822, H01L29/423, H01L29/06, // B82Y10/00
[2023/25]
CPC:
H01L29/66439 (EP); H01L29/0642 (CN); H01L21/823437 (US);
H01L21/8221 (EP); H01L21/823878 (EP); H01L29/0673 (EP,US);
H01L29/42392 (EP,US); H01L29/66545 (EP,US); H01L29/66553 (US);
H01L29/775 (EP); H01L29/78696 (EP); B82Y10/00 (EP);
H01L21/823814 (EP); H01L27/092 (EP) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/04]
Former [2023/25]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:VERFAHREN ZUR FORMUNG EINES HALBLEITERBAUELEMENTS[2023/25]
English:A METHOD FOR FORMING A SEMICONDUCTOR DEVICE[2023/25]
French:PROCÉDÉ DE FORMATION D'UN DISPOSITIF À SEMICONDUCTEUR[2023/25]
Examination procedure21.12.2023Amendment by applicant (claims and/or description)
21.12.2023Examination requested  [2024/04]
21.12.2023Date on which the examining division has become responsible
Fees paidRenewal fee
19.12.2023Renewal fee patent year 03
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XAY]US2019097011  (WU WEI-HAO [TW], et al) [X] 1-3,12,13 * paragraph [0014] - paragraph [0068] * * figures 1-17 * [A] 4,5,7-11 [Y] 6;
 [A]US2020118892  (CHENG KANGGUO [US], et al) [A] 1-13* the whole document *;
 [Y]US2020286788  (XIE RUILONG [US], et al) [Y] 9,10 * paragraph [0029] - paragraph [0092] * * figures 1-15 *;
 [IAY]US2021296184  (XIE RUILONG [US], et al) [I] 1-5,11-13 * paragraph [0026] - paragraph [0068] * * figures 1-11 * [A] 7,8 [Y] 6,9,10
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.