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EP4006955
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EP About this file: EP4006955
| EP4006955 - LOW-TEMPERATURE METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE ON AN INSULATOR [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 29.04.2022 Database last updated on 25.09.2024 | Most recent event Tooltip | 24.11.2023 | New entry: Renewal fee paid | Applicant(s) | For all designated states Commissariat à l'énergie atomique et aux énergies alternatives Bâtiment le Ponant 25, Rue Leblanc 75015 Paris / FR | [N/P] |
| Former [2022/22] | For all designated states Commissariat à l'énergie atomique et aux énergies alternatives Bâtiment le Ponant 25, rue Leblanc 75015 Paris / FR | Inventor(s) | 01 /
REBOH, Shay 38054 GRENOBLE Cedex 09 / FR | 02 /
HARTMANN, Jean-Michel 38054 GRENOBLE Cedex 09 / FR | [2022/22] | Representative(s) | Brevalex Tour Trinity 1 B Place de la Défense 92400 Courbevoie / FR | [N/P] |
| Former [2022/22] | Brevalex 95, rue d'Amsterdam 75378 Paris Cedex 8 / FR | Application number, filing date | 21306639.2 | 25.11.2021 | [2022/22] | Priority number, date | FR20200012257 | 27.11.2020 Original published format: FR 2012257 | [2022/22] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP4006955 | Date: | 01.06.2022 | Language: | FR | [2022/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 22.04.2022 | Classification | IPC: | H01L21/20, H01L21/02, H01L21/762, H01L27/12 | [2022/22] | CPC: |
H01L21/02002 (EP);
H01L21/76254 (US);
H01L21/02532 (US);
H01L21/2007 (EP);
H01L21/76256 (EP);
H01L27/1203 (EP)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/22] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | NIEDRIGTEMPERATURVERFAHREN ZUR HERSTELLUNG EINES HALBLEITERSUBSTRATS AUF ISOLATOR | [2022/22] | English: | LOW-TEMPERATURE METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE ON AN INSULATOR | [2022/22] | French: | PROCÉDÉ BASSE TEMPÉRATURE DE FABRICATION D'UN SUBSTRAT SEMICONDUCTEUR SUR ISOLANT | [2022/22] | Examination procedure | 25.11.2021 | Examination requested [2022/22] | 19.08.2022 | Amendment by applicant (claims and/or description) | 19.08.2022 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 23.11.2023 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [IY]US6323108 (KUB FRANCIS J [US], et al) [I] 1-10 * columns 5-9; figure 1 * [Y] 11-15; | [IA]CN101217107 (SHANGHAI SIMGUI TECHNOLOGY CO [CN]) [I] 1-10 * the whole document * [A] 11-15; | [A]US2010003803 (OKA SATOSHI [JP], et al) [A] 1-15 * the whole document *; | [A]FR2978605 (SOITEC SILICON ON INSULATOR [FR]) [A] 1-15* the whole document *; | [YA]US9735062 (DORIS BRUCE B [US], et al) [Y] 11-15 * columns 3-8; figures 3-11 * [A] 1-10 |