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EP4073848
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EP About this file: EP4073848
| EP4073848 - III-V SEMICONDUCTOR DEVICE [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 16.09.2022 Database last updated on 19.07.2024 | |
| Former | The international publication has been made Status updated on 23.07.2021 | ||
| Former | unknown Status updated on 27.01.2021 | Most recent event Tooltip | 17.01.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states Cambridge Gan Devices Limited 1010 Cambourne Business Park Cambourne, Cambridgshire CB23 6DP / GB | [2022/42] | Inventor(s) | 01 /
UDREA, Florin c/o Cambridge GaN Devices Ltd Deanland House 160 Cowley Rd Cambridge Cambridgeshire CB4 0DL / GB | 02 /
EFTHYMIOU, Loizos c/o Cambridge GaN Devices Ltd Deanland House 160 Cowley Rd Cambridge Cambridgeshire CB4 0DL / GB | 03 /
LONGOBARDI, Giorgia c/o Cambridge GaN Devices Ltd Deanland House 160 Cowley Rd Cambridge Cambridgeshire CB4 0DL / GB | [2022/42] | Representative(s) | Iqbal, Md Mash-Hud Marks & Clerk LLP 62-68 Hills Road Cambridge CB2 1LA / GB | [2022/42] | Application number, filing date | 21700559.4 | 13.01.2021 | [2022/42] | WO2021EP50561 | Priority number, date | US202016740996 | 13.01.2020 Original published format: US202016740996 | [2022/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2021144297 | Date: | 22.07.2021 | Language: | EN | [2021/29] | Type: | A1 Application with search report | No.: | EP4073848 | Date: | 19.10.2022 | Language: | EN | The application published by WIPO in one of the EPO official languages on 22.07.2021 takes the place of the publication of the European patent application. | [2022/42] | Search report(s) | International search report - published on: | EP | 22.07.2021 | Classification | IPC: | H01L29/778, H01L29/872, H01L29/06, H01L29/10, H01L29/40, H01L29/417, H01L29/20 | [2022/42] | CPC: |
H01L29/0619 (EP);
H01L29/7783 (US);
H01L29/2003 (EP,US);
H01L29/452 (US);
H01L29/475 (US);
H01L29/66462 (US);
H01L29/7786 (EP,US);
H01L29/7787 (US);
H01L29/872 (EP);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2022/42] | Title | German: | III-V-HALBLEITERBAUELEMENT | [2022/42] | English: | III-V SEMICONDUCTOR DEVICE | [2022/42] | French: | DISPOSITIF SEMI-CONDUCTEUR III-V | [2022/42] | Entry into regional phase | 14.07.2022 | National basic fee paid | 14.07.2022 | Designation fee(s) paid | 14.07.2022 | Examination fee paid | Examination procedure | 14.07.2022 | Examination requested [2022/42] | 14.07.2022 | Date on which the examining division has become responsible | 06.02.2023 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 13.01.2023 | Renewal fee patent year 03 | 17.01.2024 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [XI]KR20070092473 (FAIRCHILD KR SEMICONDUCTOR LTD [KR]) [X] 1-14,16,17,36,37,39 * figures 1, 5 and associated text * [I] 18,19; | [X]US2013140578 (YU CHEN-JU [TW], et al) [X] 1,36 * figures 1A, 2B and associated text *; | [A] - COMANESCU CONSTANTIN FORIN ET AL, "p-NiO/ITO transparent heterojunction Preparation and characterization", SEMICONDUCTOR CONFERENCE (CAS), 2012 INTERNATIONAL, IEEE, (20121015), doi:10.1109/SMICND.2012.6400676, ISBN 978-1-4673-0737-6, pages 131 - 134, XP032296377 [A] 1,36 * part 2 * DOI: http://dx.doi.org/10.1109/SMICND.2012.6400676 | by applicant | US2011215379 | US2019326427 | - BY D. PAGANO et al., "Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate", Appl. Phys. Lett., vol. 115, doi:10.1063/1.5121637, (20190000), page 203502, URL: https://doi.Org/10.1063/1.5121637, XP012242110 DOI: http://dx.doi.org/10.1063/1.5121637 | - K. J. CHEN et al., "GaN-on-Si Power Technology: Devices and Applications", IEEE Transactions on Electron Devices, (20170300), vol. 64, no. 3, doi:10.1109/TED.2017.2657579, pages 779 - 795, XP011641814 DOI: http://dx.doi.org/10.1109/TED.2017.2657579 | - M. J. UREN et al., "Leaky Dielectric'' Model for the Suppression of Dynamic Ron in Carbon-Doped AIGaN/GaN HEMTs", IEEE Transactions on Electron Devices, (20170700), vol. 64, no. 7, pages 2826 - 2834 |