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Extract from the Register of European Patents

EP About this file: EP4137617

EP4137617 - SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR DEPOSITION, VAPOR DEPOSITION SUBSTRATE, AND MANUFACTURING METHODS THEREFOR [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  20.01.2023
Database last updated on 14.09.2024
FormerThe international publication has been made
Status updated on  22.10.2021
Most recent event   Tooltip04.05.2024Supplementary search reportpublished on 05.06.2024  [2024/23]
Applicant(s)For all designated states
Shin-Etsu Handotai Co., Ltd.
2-1, Ohtemachi 2-chome
Chiyoda-ku
Tokyo 100-0004 / JP
[2023/08]
Inventor(s)01 / TSUCHIYA, Keitaro
c/o Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
13-1, Isobe 2-chome
Annaka-shi, Gunma 379-0196 / JP
02 / SHINOMIYA, Masaru
c/o Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
13-1, Isobe 2-chome
Annaka-shi, Gunma 379-0196 / JP
03 / QU, Weifeng
c/o Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.
13-1, Isobe 2-chome
Annaka-shi, Gunma 379-0196 / JP
 [2023/08]
Representative(s)Sonnenhauser, Thomas Martin
Wuesthoff & Wuesthoff
Patentanwälte und Rechtsanwalt PartG mbB
Schweigerstraße 2
81541 München / DE
[N/P]
Former [2023/08]Sonnenhauser, Thomas Martin
Wuesthoff & Wuesthoff
Patentanwälte PartG mbB
Schweigerstraße 2
81541 München / DE
Application number, filing date21787666.323.03.2021
[2023/08]
WO2021JP11845
Priority number, dateJP2020007379517.04.2020         Original published format: JP 2020073795
[2023/08]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2021210354
Date:21.10.2021
Language:JA
[2021/42]
Type: A1 Application with search report 
No.:EP4137617
Date:22.02.2023
Language:EN
[2023/08]
Search report(s)International search report - published on:JP21.10.2021
(Supplementary) European search report - dispatched on:EP03.05.2024
ClassificationIPC:C30B29/06, C23C16/30, C30B13/00, C30B25/18, C30B33/02, C30B29/40
[2024/23]
CPC:
C23C16/303 (EP); C30B33/02 (EP,US); C30B13/00 (EP,US);
C30B25/183 (EP); C30B25/186 (US); C30B29/06 (EP,US);
C30B29/406 (EP,US); H01L29/2003 (US) (-)
Former IPC [2023/08]C30B29/06, C23C16/34, C30B13/00, C30B25/18, C30B29/38, C30B33/02, C30B33/10
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/08]
TitleGerman:SILICIUMEINKRISTALLSUBSTRAT ZUR DAMPFABSCHEIDUNG, DAMPFABSCHEIDUNGSSUBSTRAT UND HERSTELLUNGSVERFAHREN DAFÜR[2023/08]
English:SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR DEPOSITION, VAPOR DEPOSITION SUBSTRATE, AND MANUFACTURING METHODS THEREFOR[2023/08]
French:SUBSTRAT MONOCRISTALLIN DE SILICIUM POUR LE DÉPÔT EN PHASE VAPEUR, SUBSTRAT DE DÉPÔT EN PHASE VAPEUR ET PROCÉDÉS DE FABRICATION ASSOCIÉS[2023/08]
Entry into regional phase13.10.2022Translation filed 
13.10.2022National basic fee paid 
13.10.2022Search fee paid 
13.10.2022Designation fee(s) paid 
13.10.2022Examination fee paid 
Examination procedure13.10.2022Examination requested  [2023/08]
Fees paidRenewal fee
23.02.2023Renewal fee patent year 03
27.02.2024Renewal fee patent year 04
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XY]WO2005010243  (SHINETSU HANDOTAI KK [JP], et al);
 [A]JP2007176725  (SHINETSU HANDOTAI KK);
International search[A]WO2005010243  (SHINETSU HANDOTAI KK [JP], et al);
 [A]JP2016111044  (SHINETSU HANDOTAI KK)
by applicantJP2012079952
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.