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Extract from the Register of European Patents

EP About this file: EP4167293

EP4167293 - MOS-CONTROLLED THYRISTOR ELEMENT [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  17.03.2023
Database last updated on 03.09.2024
FormerThe international publication has been made
Status updated on  17.12.2021
Most recent event   Tooltip02.07.2024New entry: Renewal fee paid 
Applicant(s)For all designated states
Electronics and Telecommunications Research Institute
218 Gajeong-ro
Yuseong-gu
Daejeon 34129 / KR
[2023/16]
Inventor(s)01 / PARK, Kun Sik
Daejeon 34129 / KR
02 / WON, Jong Il
Daejeon 34129 / KR
03 / CHO, Doo Hyung
Daejeon 34129 / KR
04 / JUNG, Dong Yun
Daejeon 34129 / KR
05 / JANG, Hyun Gyu
Daejeon 34129 / KR
 [2023/16]
Representative(s)Betten & Resch
Patent- und Rechtsanwälte PartGmbB
Maximiliansplatz 14
80333 München / DE
[2023/16]
Application number, filing date21822155.410.06.2021
[2023/16]
WO2021KR07261
Priority number, dateKR2020007054710.06.2020         Original published format: KR 20200070547
KR2021007489009.06.2021         Original published format: KR 20210074890
[2023/16]
Filing languageKO
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2021251764
Date:16.12.2021
Language:KO
[2021/50]
Type: A1 Application with search report 
No.:EP4167293
Date:19.04.2023
Language:EN
[2023/16]
Search report(s)International search report - published on:KR16.12.2021
(Supplementary) European search report - dispatched on:EP07.06.2024
ClassificationIPC:H01L29/745, H01L29/749, H01L29/06, H01L29/08, H01L21/332, // H01L29/10
[2024/28]
CPC:
H01L29/7455 (EP,US); H01L29/0696 (EP); H01L29/0839 (EP,US);
H01L29/1012 (US); H01L29/66378 (EP,US); H01L29/749 (EP);
H01L29/102 (EP) (-)
Former IPC [2023/16]H01L29/749, H01L29/745, H01L29/66, H01L29/10
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/16]
TitleGerman:MOS-GESTEUERTES THYRISTORELEMENT[2023/16]
English:MOS-CONTROLLED THYRISTOR ELEMENT[2023/16]
French:ÉLÉMENT THYRISTOR À COMMANDE MOS[2023/16]
Entry into regional phase07.09.2022Translation filed 
10.01.2023National basic fee paid 
10.01.2023Search fee paid 
10.01.2023Designation fee(s) paid 
10.01.2023Examination fee paid 
Examination procedure10.01.2023Examination requested  [2023/16]
21.06.2023Amendment by applicant (claims and/or description)
Fees paidRenewal fee
30.06.2023Renewal fee patent year 03
01.07.2024Renewal fee patent year 04
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[Y]EP0106147  (GEN ELECTRIC [US]);
 [XAY]US4454527  (PATALONG HUBERT [DE]);
 [A]JPH1027899  (FUJI ELECTRIC CO LTD)
International search[A]JP4001249B  ;
 [A]JP4371521B  ;
 [A]JP2011055017  (TOSHIBA CORP);
 [A]US2011233380  (SHEU YEUAN-MING [US]);
 [A]US2015349104  (RODOV VLADIMIR [US], et al);
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.