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EP4174945
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EP About this file: EP4174945
| EP4174945 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 31.03.2023 Database last updated on 10.07.2024 | |
| Former | The international publication has been made Status updated on 07.01.2022 | Most recent event Tooltip | 28.05.2024 | The date on which the examining division becomes responsible, has been established | 28.05.2024 | Amendment by applicant | Applicant(s) | For all designated states Sony Semiconductor Solutions Corporation 4-14-1 Asahi-cho Atsugi-shi, Kanagawa 243-0014 / JP | [2023/18] | Inventor(s) | 01 /
EJIRI, Hirokazu Atsugi-shi, Kanagawa 243-0014 / JP | 02 /
OGI, Jun Atsugi-shi, Kanagawa 243-0014 / JP | 03 /
KAWAHARA, Yuki Atsugi-shi, Kanagawa 243-0014 / JP | 04 /
YAMANE, Chigusa Atsugi-shi, Kanagawa 243-0014 / JP | [2023/18] | Representative(s) | MFG Patentanwälte Meyer-Wildhagen Meggle-Freund Gerhard PartG mbB Amalienstraße 62 80799 München / DE | [2023/18] | Application number, filing date | 21834365.5 | 06.04.2021 | [2023/18] | WO2021JP14607 | Priority number, date | JP20200112088 | 29.06.2020 Original published format: JP 2020112088 | [2023/18] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2022004088 | Date: | 06.01.2022 | Language: | JA | [2022/01] | Type: | A1 Application with search report | No.: | EP4174945 | Date: | 03.05.2023 | Language: | EN | [2023/18] | Search report(s) | International search report - published on: | JP | 06.01.2022 | (Supplementary) European search report - dispatched on: | EP | 01.12.2023 | Classification | IPC: | H10N97/00, H01L23/522, H01L27/04, H01L21/822, H01L27/146, H01L31/10, H01L31/107 | [2024/01] | CPC: |
H01L27/14636 (EP,KR,US);
H01L23/5228 (EP);
H01L27/14627 (KR,US);
H01L27/14643 (KR);
H01L27/14649 (EP);
H01L27/14683 (US);
H01L28/20 (EP,KR);
H01L28/24 (EP);
H01L31/02027 (EP);
H01L31/022408 (EP);
H01L31/107 (EP,KR,US);
H01L23/5222 (EP);
|
| Former IPC [2023/18] | H01L27/04, H01L21/822, H01L27/146, H01L31/10, H01L31/107, H04N5/369 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/18] | Title | German: | HALBLEITERBAUELEMENT UND HERSTELLUNGSVERFAHREN DAFÜR | [2023/18] | English: | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR | [2023/18] | French: | DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION | [2023/18] | Entry into regional phase | 21.12.2022 | Translation filed | 19.01.2023 | National basic fee paid | 19.01.2023 | Search fee paid | 19.01.2023 | Designation fee(s) paid | 19.01.2023 | Examination fee paid | Examination procedure | 19.01.2023 | Examination requested [2023/18] | 27.05.2024 | Amendment by applicant (claims and/or description) | 28.05.2024 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 20.04.2023 | Renewal fee patent year 03 | 15.03.2024 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US2007235880 (YANG CHIN-SHENG [TW]) [X] 1-7,14,15 * paragraphs [0040] - [0073]; figure - * [I] 8-13; | [XI]US2009302993 (FUJIWARA TSUYOSHI [JP], et al) [X] 1-3,14 * paragraphs [0049] - [0086]; figures 7M, 10L * [I] 8-13; | [XI]US2019326423 (KOBAYASHI KUNIO [JP]) [X] 1-3,14 * paragraphs [0050] - [0063] - [0074] - [0080]; figures 4,7,11,12 *[I] 8-13 | International search | [AX]JP2009302082 (HITACHI LTD) [A] 4-11, 15-18, 20 [X] 1-3, 12-14, 19; | [A]JP2018056558 (SEMICONDUCTOR ENERGY LAB CO LTD)[A] 1-20; | [AX]JP2019192690 (FUJI ELECTRIC CO LTD) [A] 2-18, 20 [X] 1, 19 | by applicant | JP2009021509 | WO2018174090 | JP2018201005 |