-
EP4213216
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP4213216
| EP4213216 - HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS FOR FABRICATING THE SAME [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 16.06.2023 Database last updated on 06.07.2024 | Most recent event Tooltip | 16.02.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states United Microelectronics Corp. No. 3, Lin-Hsin Rd. 2 Science-Based Industrial Park Hsin-Chu City 300 / TW | [2023/29] | Inventor(s) | 01 /
YANG, Po-Yu 300 Hsinchu City / TW | [2023/29] | Representative(s) | Isarpatent Patent- und Rechtsanwälte Barth Charles Hassa Peckmann & Partner mbB Friedrichstrasse 31 80801 München / DE | [2023/29] | Application number, filing date | 22158372.7 | 24.02.2022 | [2023/29] | Priority number, date | CN20221041542 | 14.01.2022 Original published format: CN202210041542 | [2023/29] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4213216 | Date: | 19.07.2023 | Language: | EN | [2023/29] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.08.2022 | Classification | IPC: | H01L29/778, H01L21/337, H01L23/29, H01L23/31, // H01L29/10, H01L29/417, H01L29/06, H01L29/20 | [2023/29] | CPC: |
H01L29/7787 (EP);
H01L29/7786 (CN,US);
H01L29/408 (EP,US);
H01L21/31155 (US);
H01L23/291 (EP);
H01L23/3171 (EP);
H01L23/3192 (EP);
H01L29/66462 (EP,CN,US);
H01L29/0657 (EP);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/29] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | TRANSISTOR MIT HOHER ELEKTRONENMOBILITÄT UND VERFAHREN ZUR HERSTELLUNG DAVON | [2023/29] | English: | HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS FOR FABRICATING THE SAME | [2023/29] | French: | TRANSISTOR À HAUTE MOBILITÉ D'ÉLECTRONS ET SES PROCÉDÉS DE FABRICATION | [2023/29] | Examination procedure | 10.03.2023 | Amendment by applicant (claims and/or description) | 10.03.2023 | Examination requested [2023/29] | 10.03.2023 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 15.02.2024 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2011248283 (CAO JIANJUN [US], et al) [A] 2-9,11 * paragraph [0030]; figure 2G *; | [A]US2015115326 (PRECHTL GERHARD [AT], et al) [A] 2-9* paragraphs [0041] - [0043] - [0 45]; figure 8 *; | [XI]US2020335617 (BANERJEE ABHISHEK [BE], et al) [X] 1,10,12-15 * figures 1-6, 10, 11 and associated text * [I] 2-9,11 |