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Extract from the Register of European Patents

EP About this file: EP4261894

EP4261894 - TRENCH-GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  19.04.2024
Database last updated on 02.07.2024
FormerThe application has been published
Status updated on  15.09.2023
Most recent event   Tooltip19.04.2024The date on which the examining division becomes responsible, has been established 
19.04.2024Request for examination filedpublished on 22.05.2024  [2024/21]
19.04.2024Change - designated statespublished on 22.05.2024  [2024/21]
Applicant(s)For all designated states
Nexperia B.V.
Jonkerbosplein 52
6534 AB Nijmegen / NL
[2023/42]
Inventor(s)01 / Siddiqui, Imran
Manchester SK7 5BJ / GB
02 / Peake, Steven
Manchester SK7 5BJ / GB
 [2023/42]
Representative(s)Pjanovic, Ilija
Nexperia B.V.
Legal & IP
Jonkerbosplein 52
6534 AB Nijmegen / NL
[2023/42]
Application number, filing date22168316.214.04.2022
[2023/42]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP4261894
Date:18.10.2023
Language:EN
[2023/42]
Search report(s)(Supplementary) European search report - dispatched on:EP30.09.2022
ClassificationIPC:H01L29/78, H01L21/336, H01L29/40
[2023/42]
CPC:
H01L29/7813 (EP,US); H01L29/7801 (CN); H01L21/26513 (US);
H01L29/063 (CN); H01L29/0684 (CN); H01L29/1095 (US);
H01L29/401 (EP,US); H01L29/407 (EP,US); H01L29/41775 (CN);
H01L29/4236 (CN); H01L29/42364 (CN); H01L29/66674 (CN);
H01L29/66734 (EP,US); H01L29/41766 (EP); H01L29/66727 (EP) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/21]
Former [2023/42]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:GRABEN-GATTER-HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG[2023/42]
English:TRENCH-GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME[2023/42]
French:DISPOSITIF SEMI-CONDUCTEUR À GRILLE EN TRANCHÉE ET SON PROCÉDÉ DE FABRICATION[2023/42]
Examination procedure16.04.2024Amendment by applicant (claims and/or description)
16.04.2024Examination requested  [2024/21]
16.04.2024Date on which the examining division has become responsible
Fees paidRenewal fee
28.03.2024Renewal fee patent year 03
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Documents cited:Search[Y]US2011136309  (GRIVNA GORDON M [US], et al) [Y] 10* paragraphs [0016] - [0042]; figures 1-20 *;
 [XYI]US2013248992  (PADMANABHAN BALAJI [US], et al) [X] 1-9,12-15 * paragraphs [0001] - [0050]; figures 1-9 * [Y] 10 [I] 11
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.