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EP4156288
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EP About this file: EP4156288
| EP4156288 - HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TRANSISTOR [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 29.09.2023 Database last updated on 15.07.2024 | |
| Former | The application has been published Status updated on 24.02.2023 | Most recent event Tooltip | 26.06.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states INTEL Corporation 2200 Mission College Blvd. Santa Clara, CA 95054 / US | [2023/13] | Inventor(s) | 01 /
TUNG, I-Cheng Hillsboro, 97124 / US | 02 /
PENUMATCHA, Ashish Verma Beaverton, 97003 / US | 03 /
SUNG, Seung Hoon Portland, 97229 / US | 04 /
ATANASOV, Sarah Beaverton, 97003 / US | 05 /
KAVALIEROS, Jack T. Portland, 97229 / US | 06 /
METZ, Matther Portland, 97229 / US | 07 /
AVCI, Uygar E. Portland, 97225 / US | 08 /
RAMAMURTHY, Rahul Hillsboro, 97123 / US | 09 /
LIN, Chia-Ching Portland, 97229 / US | 10 /
OGUZ, Kaan Portland, 97229 / US | [2023/13] | Representative(s) | Goddar, Heinz J. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [2023/13] | Application number, filing date | 22184318.8 | 12.07.2022 | [2023/13] | Priority number, date | US202117485291 | 24.09.2021 Original published format: US202117485291 | [2023/13] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4156288 | Date: | 29.03.2023 | Language: | EN | [2023/13] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 04.01.2023 | Classification | IPC: | H01L29/51, H01L21/28 | [2023/13] | CPC: |
H01L29/513 (EP);
H01L29/4908 (US);
B82Y10/00 (EP);
H01L21/0259 (US);
H01L21/28185 (EP);
H01L21/28229 (US);
H01L29/0665 (US);
H01L29/0673 (EP);
H01L29/401 (EP);
H01L29/42392 (EP,US);
H01L29/516 (EP);
H01L29/517 (EP);
H01L29/66439 (EP);
H01L29/66742 (US);
H01L29/66795 (EP,US);
H01L29/775 (EP);
H01L29/78391 (US);
H01L29/785 (EP);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/44] |
| Former [2023/13] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | HOCH-K- ODER FERROELEKTRISCHES GATE-OXID MIT NULL-SIO2 IL PROZESS FÜR TRANSISTOR | [2023/13] | English: | HIGH-K OR FERROELECTRIC GATE OXIDE WITH ZERO-SIO2 IL PROCESS FOR TRANSISTOR | [2023/13] | French: | OXYDE DE GRILLE À HAUTE TENEUR EN K OU FERROÉLECTRIQUE AVEC PROCÉDÉ ZERO-SIO2 IL POUR TRANSISTOR | [2023/13] | Examination procedure | 27.09.2023 | Amendment by applicant (claims and/or description) | 27.09.2023 | Examination requested [2023/44] | 27.09.2023 | Date on which the examining division has become responsible | Fees paid | Renewal fee | 26.06.2024 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI]US2011012210 (XU JEFFREY JUNHAO [TW]) [X] 1,2,5,9-11 * paragraphs [0005] - [0025]; figures 1-7; claims 1,7 * [Y] 12 [I] 3,4,6-8; | [XYI]US2012049247 (LEE DA-YUAN [TW], et al) [X] 1-5,9-11 * paragraphs [0021] - [0030]; figures 1-9 * [Y] 12 [I] 6-8; | [XI] - SEO KANG-ILL ET AL, "Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, (20050218), vol. 86, no. 8, doi:10.1063/1.1866644, ISSN 0003-6951, pages 82904 - 082904, XP012066468 [X] 13 * the whole document * [I] 14,15 DOI: http://dx.doi.org/10.1063/1.1866644 | [Y] - LEE SANG JAE ET AL, "Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOzon Si substrate", AIP ADVANCES, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, (20191217), vol. 9, no. 12, doi:10.1063/1.5124402, XP012242911 [Y] 12 * the whole document * DOI: http://dx.doi.org/10.1063/1.5124402 |