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EP4321658
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EP About this file: EP4321658
| EP4321658 - METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 12.01.2024 Database last updated on 26.06.2024 | |
| Former | The international publication has been made Status updated on 14.10.2022 | Most recent event Tooltip | 14.06.2024 | Change: Validation states | published on 17.07.2024 [2024/29] | 14.06.2024 | Change - extension states | published on 17.07.2024 [2024/29] | Applicant(s) | For all designated states Shin-Etsu Handotai Co., Ltd. 2-1, Ohtemachi 2-chome Chiyoda-ku Tokyo 100-0004 / JP | [2024/07] | Inventor(s) | 01 /
HAGIMOTO, Kazunori Annaka-shi, Gunma 379-0196 / JP | 02 /
ISHIZAKI, Junya Annaka-shi, Gunma 379-0196 / JP | 03 /
OHTSUKI, Tsuyoshi Annaka-shi, Gunma 379-0196 / JP | [2024/07] | Representative(s) | Sonnenhauser, Thomas Martin Wuesthoff & Wuesthoff Patentanwälte und Rechtsanwalt PartG mbB Schweigerstraße 2 81541 München / DE | [N/P] |
| Former [2024/07] | Sonnenhauser, Thomas Martin Wuesthoff & Wuesthoff Patentanwälte PartG mbB Schweigerstraße 2 81541 München / DE | Application number, filing date | 22784449.5 | 16.03.2022 | [2024/07] | WO2022JP11764 | Priority number, date | JP20210066022 | 08.04.2021 Original published format: JP 2021066022 | [2024/07] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2022215464 | Date: | 13.10.2022 | Language: | JA | [2022/41] | Type: | A1 Application with search report | No.: | EP4321658 | Date: | 14.02.2024 | Language: | EN | [2024/07] | Search report(s) | International search report - published on: | JP | 13.10.2022 | Classification | IPC: | C30B25/18, H01L21/205, C30B29/38 | [2024/07] | CPC: |
H01L21/02381 (EP,US);
H01L21/263 (US);
C30B25/183 (EP);
C30B29/406 (EP);
C30B29/68 (EP);
C30B33/00 (EP);
H01L21/02458 (EP,US);
H01L21/02507 (EP);
H01L21/0254 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2024/07] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES NITRIDHALBLEITERWAFERS | [2024/07] | English: | METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER | [2024/07] | French: | PROCÉDÉ DE PRODUCTION DE TRANCHE DE SEMI-CONDUCTEUR AU NITRURE | [2024/07] | Entry into regional phase | 26.09.2023 | Translation filed | 26.09.2023 | National basic fee paid | 26.09.2023 | Search fee paid | 26.09.2023 | Designation fee(s) paid | 26.09.2023 | Examination fee paid | Examination procedure | 26.09.2023 | Examination requested [2024/07] | Fees paid | Renewal fee | 27.02.2024 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [AX]JP2006351649 (SHOWA DENKO KK) [A] 4-5 [X] 1-3; | [AX]JP2015523712 (SILICON GENESIS CORP.) [A] 5 [X] 1-4; | [AX]US2017069723 (LINTHICUM KEVIN J [US]) [A] 3 [X] 1-2, 4-5; | [AX]JP2018113358 (MITSUBISHI ELECTRIC CORP) [A] 3 [X] 1-2, 4-5; | [AX]JP2020098839 (SHINETSU HANDOTAI KK) [A] 4-5 [X] 1-3; | [EX]JP2022050886 (SHINETSU HANDOTAI KK) [EX] 1-5* claims, paragraphs [0020]-[0022] * | by applicant | WO2005020320 |