-
EP4332279
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP4332279
| EP4332279 - MULTILAYER STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING MULTILAYER STRUCTURE [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 02.02.2024 Database last updated on 14.06.2024 | |
| Former | The international publication has been made Status updated on 05.11.2022 | Most recent event Tooltip | 08.05.2024 | Amendment by applicant | Applicant(s) | For all designated states SHIN-ETSU CHEMICAL CO., LTD. 4-1, Marunouchi 1 chome Chiyoda-ku Tokyo 1000005 / JP | [2024/10] | Inventor(s) | 01 /
WATABE, Takenori Annaka-shi, Gunma 379-0195 / JP | 02 /
HASHIGAMI, Hiroshi Annaka-shi, Gunma 379-0195 / JP | 03 /
SAKATSUME, Takahiro Annaka-shi, Gunma 379-0195 / JP | [2024/10] | Representative(s) | Sonnenhauser, Thomas Martin Wuesthoff & Wuesthoff Patentanwälte und Rechtsanwalt PartG mbB Schweigerstraße 2 81541 München / DE | [N/P] |
| Former [2024/10] | Sonnenhauser, Thomas Martin Wuesthoff & Wuesthoff Patentanwälte PartG mbB Schweigerstraße 2 81541 München / DE | Application number, filing date | 22795493.0 | 30.03.2022 | [2024/10] | WO2022JP15911 | Priority number, date | JP20210076657 | 28.04.2021 Original published format: JP 2021076657 | [2024/10] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2022230577 | Date: | 03.11.2022 | Language: | JA | [2022/44] | Type: | A1 Application with search report | No.: | EP4332279 | Date: | 06.03.2024 | Language: | EN | [2024/10] | Search report(s) | International search report - published on: | JP | 03.11.2022 | Classification | IPC: | C30B29/16, C23C16/40, C30B25/18, H01L21/205, H01L21/208 | [2024/10] | CPC: |
C23C16/40 (EP);
C30B25/18 (EP,KR);
C23C16/4486 (EP);
C30B29/16 (EP,KR);
H01L21/0242 (EP,KR);
H01L21/02428 (KR);
H01L21/0243 (EP);
H01L21/02483 (EP);
H01L21/02488 (EP);
H01L21/02565 (EP,KR);
H01L21/02587 (EP);
H01L21/0262 (EP,KR);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2024/10] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | MEHRSCHICHTIGE STRUKTUR, HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINER MEHRSCHICHTIGEN STRUKTUR | [2024/10] | English: | MULTILAYER STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING MULTILAYER STRUCTURE | [2024/10] | French: | STRUCTURE MULTICOUCHE, DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION DE STRUCTURE MULTICOUCHE | [2024/10] | Entry into regional phase | 24.10.2023 | Translation filed | 24.10.2023 | National basic fee paid | 24.10.2023 | Search fee paid | 24.10.2023 | Designation fee(s) paid | 24.10.2023 | Examination fee paid | Examination procedure | 24.10.2023 | Examination requested [2024/10] | 07.05.2024 | Amendment by applicant (claims and/or description) | Fees paid | Renewal fee | 24.10.2023 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [Y]JP2013028480 (UNIV KOCHI TECHNOLOGY) [Y] 1-17* paragraphs [0001], [0010]-[0050] *; | [Y]JP2015039033 (SAINT GOBAIN CERAMICS) [Y] 1-17 * claims 1, 2, 4, 9, paragraphs [0001], [0007], [0014], [0015], [0018], [0054], [0057] *; | [Y]JP2021024184 (SHINETSU CHEMICAL CO) [Y] 1-17 * paragraphs [0001]-[0003] * | by applicant | JP2013028480 | JP2015199649 | - "Electrical Conductive Corundum-Structured a-Ga O Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition", Japanese Journal of Applied Physics, (20120000), vol. 51, page 070203 |