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Extract from the Register of European Patents

EP About this file: EP4276834

EP4276834 - CONTROL METHOD, SEMICONDUCTOR MEMORY AND ELECTRONIC DEVICE [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  13.10.2023
Database last updated on 05.10.2024
FormerThe international publication has been made
Status updated on  29.09.2023
Formerunknown
Status updated on  11.01.2023
Most recent event   Tooltip20.08.2024Change - representative 
Applicant(s)For all designated states
Changxin Memory Technologies, Inc.
No. 388, Xingye Avenue
Economic and Technological Development Area
Hefei, Anhui 230601 / CN
[2023/46]
Inventor(s)01 / EOM, Yoonjoo
Hefei Anhui 230601 / CN
02 / WANG, Lin
Hefei Anhui 230601 / CN
03 / ZHANG, Zhiqiang
Hefei Anhui 230601 / CN
04 / GONG, Yuanyuan
Hefei Anhui 230601 / CN
 [2023/46]
Representative(s)Gulde & Partner
Patent- und Rechtsanwaltskanzlei mbB
Wallstraße 58/59
10179 Berlin / DE
[N/P]
Former [2023/46]V.O.
P.O. Box 87930
2508 DH Den Haag / NL
Application number, filing date22835197.919.05.2022
[2023/46]
WO2022CN93942
Priority number, dateCN20221030745425.03.2022         Original published format: CN202210307454
CN20221049833209.05.2022         Original published format: CN202210498332
[2023/46]
Filing languageZH
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2023178821
Date:28.09.2023
Language:ZH
[2023/39]
Type: A1 Application with search report 
No.:EP4276834
Date:15.11.2023
Language:EN
[2023/46]
Search report(s)International search report - published on:CN28.09.2023
(Supplementary) European search report - dispatched on:EP05.03.2024
ClassificationIPC:G11C29/02, G11C29/50, G11C29/12, G11C7/10
[2024/14]
CPC:
G11C29/50008 (EP); G11C29/022 (EP,KR); G11C29/46 (US);
G11C11/4096 (KR); G11C29/028 (EP); G11C29/14 (US);
G11C29/36 (US); G11C29/56 (KR); G11C7/1009 (EP);
G11C7/1045 (KR) (-)
Former IPC [2023/46]G11C29/12
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/46]
Extension statesBANot yet paid
MENot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:STEUERVERFAHREN, HALBLEITERSPEICHER UND ELEKTRONISCHE VORRICHTUNG[2023/46]
English:CONTROL METHOD, SEMICONDUCTOR MEMORY AND ELECTRONIC DEVICE[2023/46]
French:PROCÉDÉ DE COMMANDE, MÉMOIRE À SEMI-CONDUCTEURS ET DISPOSITIF ÉLECTRONIQUE[2023/46]
Entry into regional phase11.01.2023Translation filed 
11.01.2023National basic fee paid 
11.01.2023Search fee paid 
11.01.2023Designation fee(s) paid 
11.01.2023Examination fee paid 
Examination procedure11.01.2023Examination requested  [2023/46]
29.05.2024Amendment by applicant (claims and/or description)
29.05.2024Date on which the examining division has become responsible
Fees paidRenewal fee
27.03.2024Renewal fee patent year 03
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US6438667  (SHINOZAKI NAOHARU [JP]);
 [A]US2008143377  (CHO YONG-KI [KR], et al);
 [A]US2010237902  (SOHN YOUNG-HOON [KR], et al);
 [A]US2015084668  (YUN JAE WOONG [KR])
International search[A]US2005007835  (LEE KEE-HOON [KR], et al) [A] 1-22 * entire document *;
 [A]US2012239337  (MATSUO TATSURU [JP]) [A] 1-22 * entire document *;
 [A]US2014298125  (DEVADZE SERGEI [EE], et al) [A] 1-22* entire document *;
 [A]US2015016200  (CHA JEONG YUN [KR], et al) [A] 1-22 * claims 1-20, and description, paragraphs [0006]-[0128] *;
 [A]US2015084668  (YUN JAE WOONG [KR]) [A] 1-22 * entire document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.