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Extract from the Register of European Patents

EP About this file: EP4297075

EP4297075 - MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTRATE ORIENTATION [Right-click to bookmark this link]
StatusRequest for examination was made
Status updated on  07.06.2024
Database last updated on 07.06.2024
FormerThe application has been published
Status updated on  24.11.2023
Most recent event   Tooltip07.06.2024The date on which the examining division becomes responsible, has been established 
07.06.2024Request for examination filedpublished on 10.07.2024 [2024/28]
07.06.2024Change - designated statespublished on 10.07.2024 [2024/28]
Applicant(s)For all designated states
INTEL Corporation
2200 Mission College Blvd.
Santa Clara, CA 95054 / US
[2023/52]
Inventor(s)01 / KAVALIEROS, Jack
Portland, 97229 / US
02 / RADOSAVLJEVIC, Marko
Portland, 97229 / US
03 / GLASS, Glenn
Portland, 97229 / US
04 / BUDREVICH, Aaron
Portland, 97229 / US
05 / AGRAWAL, Ashish
Hillsboro, 97124 / US
06 / SUNG, Seung Hoon
Portland, 97229 / US
07 / BOWONDER, Anupama
Portland, 97229 / US
08 / PAUL, Rajat
Portland, 97229 / US
09 / GUHA, Biswajeet
Hillsboro, 97124 / US
10 / NAHM, Rambert
Beavertown, 97006 / US
11 / MERRILL, Devin
McMinnville, 97128 / US
12 / ONI, Adedapo
North Plains, 97133 / US
13 / HSU, William
Portland, 97229 / US
14 / GHOSE, Susmita
Hillsboro, 97124 / US
15 / SUBRAMANIAN, Shruti
Hillsboro, 97124 / US
16 / BRIGGS, Natalie
Hillsboro, 97124 / US
17 / RAMAMURTHY, Rahul
Hillsboro, 97123 / US
18 / TSENG, Hsin-Ying
Hillsboro, 97006 / US
 [2023/52]
Representative(s)HGF
HGF Limited
1 City Walk
Leeds LS11 9DX / GB
[2023/52]
Application number, filing date23170147.526.04.2023
[2023/52]
Priority number, dateUS20221784755523.06.2022         Original published format: US202217847555
[2023/52]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP4297075
Date:27.12.2023
Language:EN
[2023/52]
Search report(s)(Supplementary) European search report - dispatched on:EP27.11.2023
ClassificationIPC:H01L21/8238, H01L27/092, H01L29/04, H01L29/775
[2023/52]
CPC:
H01L27/092 (EP); H01L29/78696 (EP,US); B82Y10/00 (EP);
H01L21/823807 (EP); H01L29/045 (EP); H01L29/0673 (EP,US);
H01L29/42392 (EP,US); H01L29/66439 (EP); H01L29/775 (EP);
H01L21/823878 (EP) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   ME,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2024/28]
Former [2023/52]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  ME,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
Extension statesBANot yet paid
Validation statesKHNot yet paid
MANot yet paid
MDNot yet paid
TNNot yet paid
TitleGerman:MOBILITÄTSVERBESSERUNG BEI GATE-ALL-AROUND-TRANSISTOREN DURCH SUBSTRATAUSRICHTUNG[2023/52]
English:MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTRATE ORIENTATION[2023/52]
French:AMÉLIORATION DE LA MOBILITÉ DANS DES TRANSISTORS À GRILLE ENVELOPPANTE BASÉE SUR L'ORIENTATION DU SUBSTRAT[2023/52]
Examination procedure03.06.2024Amendment by applicant (claims and/or description)
03.06.2024Examination requested  [2024/28]
03.06.2024Date on which the examining division has become responsible
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Documents cited:Search[XY]US2014209855  (CEA STEPHEN M [US], et al) [X] 1-4,6-12 * paragraphs [0026] , [0 30] - [0032] - [0 35] , [0 41] - [0044] - [0 47] , [0 50] - [0067]; figures 1A, 3, 6, 7 * [Y] 5;
 [XYI]US2018286764  (RODDER MARK S [US], et al) [X] 1-4,6,7,10-12 * paragraphs [0052] , [0 53] , [0 55] - [0065]; figure 2 * [Y] 5 [I] 9;
 [XYI]WO2021203899  (INST OF MICROELECTRONICS CAS [CN]) [X] 1-4,6-8,10-12 * page 4, line 1 - line 15 * * page 11, line 1 - line 3; figure 7 * * page 16, line 9 - page 17, line 2; figure 19 * * page 19, line 14 - line 29; figures 23(b), 24, 27(a) * [Y] 5 [I] 9;
 [Y]  - WECKX P ET AL, "Novel forksheet device architecture as ultimate logic scaling device towards 2nm", 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, (20191207), doi:10.1109/IEDM19573.2019.8993635, XP033714586 [Y] 5 * abstract *

DOI:   http://dx.doi.org/10.1109/IEDM19573.2019.8993635
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.