Extract from the Register of European Patents

EP About this file: EP4236650

EP4236650 - METHOD FOR READING THREE-DIMENSIONAL FLASH MEMORY [Right-click to bookmark this link]
StatusThe patent has been granted
Status updated on  11.04.2025
Database last updated on 26.03.2026
FormerGrant of patent is intended
Status updated on  05.12.2024
FormerExamination is in progress
Status updated on  07.06.2024
FormerRequest for examination was made
Status updated on  28.07.2023
Most recent event   Tooltip27.02.2026New entry: Communication of a notice of opposition and request to file observations + time limit 
Applicant(s)For all designated states
Yangtze Memory Technologies Co., Ltd.
No.88 Weilai 3rd Road
East Lake High-tech Development Zone
Wuhan, Hubei 430000 / CN
[2023/35]
Inventor(s)01 / CHEN, Zilong
Wuhan, Hubei 430000 / CN
02 / FU, Xiang
Wuhan, Hubei 430000 / CN
 [2025/19]
Former [2023/35]01 / CHEN, Zilong
Wuhan, Hubei 430074 / CN
02 / FU, Xiang
Wuhan, Hubei 430074 / CN
Representative(s)Lippert Stachow Patentanwälte Rechtsanwälte
Partnerschaft mbB
Postfach 30 02 08
51412 Bergisch Gladbach / DE
[2023/35]
Application number, filing date23181351.023.10.2019
[2023/35]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP4236650
Date:30.08.2023
Language:EN
[2023/35]
Type: A3 Search report 
No.:EP4236650
Date:11.10.2023
Language:EN
[2023/41]
Type: B1 Patent specification 
No.:EP4236650
Date:14.05.2025
Language:EN
[2025/20]
Search report(s)(Supplementary) European search report - dispatched on:EP07.09.2023
ClassificationIPC:G11C16/34, G11C16/04, G11C11/56, G11C16/08, G11C16/32, H10B41/10, H10B41/27, H10B43/10
[2023/41]
CPC:
G11C16/08 (EP,CN,KR,US); G11C16/3459 (EP,CN,KR); G11C11/5671 (EP,CN,KR);
G11C16/3427 (EP,CN,KR,US); G11C16/0483 (EP,CN,KR,US); G11C16/26 (US);
G11C16/32 (EP,CN,KR); H10B41/10 (EP); H10B41/27 (EP,KR);
H10B43/10 (EP,KR); H10B43/27 (US); G11C2211/5621 (EP,CN,KR) (-)
Former IPC [2023/35]H10B43/10
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2023/35]  
TitleGerman:VERFAHREN ZUM LESEN EINES DREIDIMENSIONALEN FLASH-SPEICHERS[2023/35]
English:METHOD FOR READING THREE-DIMENSIONAL FLASH MEMORY[2023/35]
French:PROCÉDÉ PERMETTANT DE LIRE UNE MÉMOIRE FLASH TRIDIMENSIONNELLE[2023/35]
Examination procedure26.06.2023Examination requested  [2023/35]
11.04.2024Amendment by applicant (claims and/or description)
11.04.2024Date on which the examining division has become responsible
07.06.2024Despatch of a communication from the examining division (Time limit: M04)
07.10.2024Reply to a communication from the examining division
06.12.2024Communication of intention to grant the patent
03.04.2025Fee for grant paid
03.04.2025Fee for publishing/printing paid
03.04.2025Receipt of the translation of the claim(s)
Parent application(s)   TooltipEP19949634.0  / EP3891743
Divisional application(s)EP25167197.0  / EP4557906
Opposition(s)Opponent(s)01  13.02.2026  16.02.2026  ADMISSIBLE
Micron Technology, Inc.
8000 South Federal Way
Boise, ID 83716 / US
Opponent's representative
Carpmaels & Ransford LLP
One Southampton Row
London WC1B 5HA / GB
 [2026/13]
27.02.2026Invitation to proprietor to file observations on the notice of opposition
Fees paidRenewal fee
26.06.2023Renewal fee patent year 03
26.06.2023Renewal fee patent year 04
25.10.2023Renewal fee patent year 05
28.10.2024Renewal fee patent year 06
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Lapses during opposition  TooltipCZ14.05.2025
ES14.05.2025
HR14.05.2025
PL14.05.2025
SK14.05.2025
SM14.05.2025
NO14.08.2025
RS14.08.2025
GR15.08.2025
IS14.09.2025
[2026/11]
Former [2025/49]ES14.05.2025
HR14.05.2025
PL14.05.2025
NO14.08.2025
RS14.08.2025
GR15.08.2025
IS14.09.2025
Former [2025/48]ES14.05.2025
HR14.05.2025
PL14.05.2025
NO14.08.2025
RS14.08.2025
GR15.08.2025
Former [2025/46]ES14.05.2025
Documents cited:Search[XAI] US2015036426  (KWAK DONGHUN et al.) [X] 1,2,8,12-14 * paragraph [0061] - paragraph [0068]; figure 3 * * paragraph [0074] - paragraph [0077]; figures 5A, 5B * * paragraph [0085] - paragraph [0099]; figures 7, 8 * * paragraph [0100] - paragraph [0102]; figure 9 *[A] 4-7,11 [I] 3,9,10,15
 [XAI] US2018137925  (NAM SANG-WAN et al.) [X] 1,2,4-6,8,13,14 * paragraph [0055] - paragraph [0057]; figure 3 * * paragraph [0064] - paragraph [0067]; figure 5 * * paragraph [0070] - paragraph [0079]; figure 9 *[A] 7,11 [I] 3,9,10,12,15
OppositionUS9286994
 US2015003169
 US2019074062
 US9837164
 US2014247659
 US10235294
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