-
EP4245894
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP4245894
| EP4245894 - METHOD FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT USING CONTINUOUS CZOCHRALSKI METHOD AND A SINGLE CRYSTAL SILICON INGOT GROWN BY THIS METHOD [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 18.08.2023 Database last updated on 09.09.2024 | Most recent event Tooltip | 28.08.2024 | New entry: Renewal fee paid | Applicant(s) | For all designated states GlobalWafers Co., Ltd. No. 8 Industrial East Road 2 Science-Based Industrial Park Hsinchu / TW | [2023/38] | Inventor(s) | 01 /
HUDSON, Carissima Marie St. Peters, Missouri 63376 / US | 02 /
RYU, Jae-Woo St. Peters, Missouri 63376 / US | [2023/38] | Representative(s) | Maiwald GmbH Elisenhof Elisenstraße 3 80335 München / DE | [2023/38] | Application number, filing date | 23190873.2 | 04.08.2020 | [2023/38] | Priority number, date | US201916569949 | 13.09.2019 Original published format: US201916569949 | US201916570010 | 13.09.2019 Original published format: US201916570010 | [2023/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP4245894 | Date: | 20.09.2023 | Language: | EN | [2023/38] | Type: | A3 Search report | No.: | EP4245894 | Date: | 14.02.2024 | Language: | EN | [2024/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.01.2024 | Classification | IPC: | C30B15/00, C30B15/04, C30B15/20, C30B15/22, C30B29/06 | [2023/44] | CPC: |
C30B29/06 (EP,CN,KR);
C30B15/002 (EP,CN,KR);
C30B15/04 (EP,CN,KR);
C30B15/203 (EP,CN,KR);
C30B15/22 (EP,CN,KR)
|
| Former IPC [2023/38] | C30B29/06 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2023/38] | Title | German: | VERFAHREN ZUM ZÜCHTEN EINES STICKSTOFFDOTIERTEN SILIZIUMEINKRISTALLBLOCKS MITTELS DES KONTINUIERLICHEN CZOCHRALSKI-VERFAHRENS | [2023/38] | English: | METHOD FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT USING CONTINUOUS CZOCHRALSKI METHOD AND A SINGLE CRYSTAL SILICON INGOT GROWN BY THIS METHOD | [2023/38] | French: | PROCÉDÉ DE CROISSANCE D'UN LINGOT DE SILICIUM MONOCRISTALLIN DOPÉ À L'AZOTE UTILISANT UN PROCÉDÉ DE CZOCHRALSKI CONTINU | [2023/38] | Examination procedure | 10.08.2023 | Examination requested [2023/38] | 09.08.2024 | Amendment by applicant (claims and/or description) | 09.08.2024 | Date on which the examining division has become responsible | Parent application(s) Tooltip | EP20760995.9 / EP4028583 | Fees paid | Renewal fee | 10.08.2023 | Renewal fee patent year 03 | 10.08.2023 | Renewal fee patent year 04 | 27.08.2024 | Renewal fee patent year 05 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [I]US2007157870 (HOURAI MASATAKA [JP], et al); | [A]EP1887110 (SUMCO CORP [JP]); | [A]WO2009025336 (SUMCO CORP [JP], et al) | by applicant | US5919302 | US6254672 | US6287380 | US6312516 | US6328795 | US2003196587 | US8673248 |