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EP4345906
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EP About this file: EP4345906
| EP4345906 - GATE-ALL-AROUND FIELD-EFFECT TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING DIFFERENT GERMANIUM CONCENTRATIONS [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 29.03.2024 Database last updated on 15.06.2024 | |
| Former | The application has been published Status updated on 01.03.2024 | Most recent event Tooltip | 29.03.2024 | The date on which the examining division becomes responsible, has been established | 29.03.2024 | Request for examination filed | published on 01.05.2024 [2024/18] | 29.03.2024 | Change - designated states | published on 01.05.2024 [2024/18] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 129, Samsung-ro Yeongtong-gu Suwon-si, Gyeonggi-do 16677 / KR | [2024/14] | Inventor(s) | 01 /
CHO, Namkyu Suwon-si, Gyeonggi-do 16677 / KR | 02 /
KIM, Seokhoon Suwon-si, Gyeonggi-do 16677 / KR | 03 /
KIM, Jungtaek Suwon-si, Gyeonggi-do 16677 / KR | 04 /
PARK, Pankwi Suwon-si, Gyeonggi-do 16677 / KR | 05 /
JEONG, Seojin Suwon-si, Gyeonggi-do 16677 / KR | [2024/14] | Representative(s) | Kuhnen & Wacker Patent- und Rechtsanwaltsbüro PartG mbB Prinz-Ludwig-Straße 40A 85354 Freising / DE | [2024/14] | Application number, filing date | 23193167.6 | 24.08.2023 | [2024/14] | Priority number, date | KR20220120858 | 23.09.2022 Original published format: KR 20220120858 | [2024/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP4345906 | Date: | 03.04.2024 | Language: | EN | [2024/14] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.02.2024 | Classification | IPC: | H01L29/06, H01L29/08, H01L29/161, H01L29/165, H01L29/423, H01L29/66, H01L29/775, // B82Y10/00, H01L29/10 | [2024/14] | CPC: |
H01L29/0673 (EP,US);
H01L29/0847 (EP,US);
H01L21/02532 (US);
H01L21/02658 (US);
H01L29/161 (EP,US);
H01L29/165 (EP);
H01L29/42392 (EP,US);
H01L29/66439 (EP,US);
H01L29/66545 (EP,US);
H01L29/775 (EP,US);
H01L29/78696 (EP);
B82Y10/00 (EP);
H01L29/1079 (EP)
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| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2024/18] |
| Former [2024/14] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, ME, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | Validation states | KH | Not yet paid | MA | Not yet paid | MD | Not yet paid | TN | Not yet paid | Title | German: | GATE-ALL-AROUND-FELDEFFEKT-TRANSISTOREN MIT SOURCE/DRAINBEREICHEN MIT UNTERSCHIEDLICHEN GERMANIUMKONZENTRATIONEN | [2024/14] | English: | GATE-ALL-AROUND FIELD-EFFECT TRANSISTORS WITH SOURCE/DRAIN REGIONS HAVING DIFFERENT GERMANIUM CONCENTRATIONS | [2024/14] | French: | TRANSISTORS D'EFFECTUATION DE CHAMP AVEC DES RÉGIONS SOURCE/DRAIN AYANT DES CONCENTRATIONS DE GERMANIUM DIFFÉRENTES | [2024/14] | Examination procedure | 25.03.2024 | Examination requested [2024/18] | 25.03.2024 | Date on which the examining division has become responsible |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2020381564 (KANG SEUNG MO [KR], et al) [A] 1-15 * Figs. 5, 9B, 10B, 11B, 12B and corresponding text passages.; paragraphs [0047] , [0 55] , [0 60] , [0 65] *; | [Y]US2021057570 (LIN YAN-TING [TW], et al) [Y] 1,5,8,12 * Figs. 7-10 and corresponding text passages.; paragraphs [0008] , [0 37] , [0 42] , [0 44] , [0 50] *; | [IY]US2022052203 (MORE SHAHAJI B [TW]) [I] 1-3,5-12 * Figs. 5-10 and corresponding text passages. * [Y] 1-3,5-9,11,12; | [A]US2022069134 (KIM DONGWOO [KR], et al) [A] 1-15* Figs. 2-4 and corresponding text passages.; paragraph [0028] *; | [XYI]US2022190168 (KIM JUNG TAEK [KR], et al) [X] 1,5,12-15 * Figs. 2, 11, 12 and corresponding text passages.; paragraphs [0121] , [ 122] * [Y] 1-3,5-7,9,11,12 [I] 4,8; | [A]US2022302281 (LEE CHIEN-WEI [TW], et al) [A] 1-15 * Fig. 7 and corresponding text passages.; paragraphs [0030] - [0036] * |