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EP0002798
European procedure
Extract from the Register of European Patents
EP About this file: EP0002798
| EP0002798 - Process for the removal of a metallic layer from a semiconductor body by reactive ion etching [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.09.2016 Database last updated on 20.05.2024 | Most recent event Tooltip | 14.09.2016 | No opposition filed within time limit | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] | Inventor(s) | 01 /
Kitcher, James Robert 11 Van Siclen Drive Poughkeepsie New York 12601 / US | 02 /
Ozols, Gunars Miervaldis 26 Academy St. West Wappingers Falls New York 12590 / US | 03 /
Zingerman, Bryant 34 Duelk Avenue Monroe New York 10950 / US | [N/P] | Representative(s) | Kreidler, Eva-Maria Schönaicher Strasse 220 D-7030 Böblingen / DE | [N/P] |
| Former [1981/28] | Kreidler, Eva-Maria, Dr. rer. nat. Schönaicher Strasse 220 D-7030 Böblingen / DE | Application number, filing date | 78101788.4 | 20.12.1978 | Priority number, date | US19770866087 | 30.12.1977 Original published format: US 866087 | Filing language | DE | Procedural language | DE | Publication | Type: | A3 Search report | No.: | EP0002798 | Date: | Status: | (deleted) | [N/P] | Type: | A2 Application without search report | No.: | EP0002798 | Date: | 11.07.1979 | Language: | DE | [N/P] | Type: | B1 Patent specification | No.: | EP0002798 | Date: | 15.07.1981 | Language: | DE | [1981/28] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.05.1979 | Classification | IPC: | H01L21/28, H01L21/60, H01L21/306, C23C15/00 | [1981/28] | CPC: |
C23F4/00 (EP);
H01L21/28 (EP);
H01L21/32136 (EP);
H01L21/76886 (EP);
H01L21/76892 (EP)
| Designated contracting states | DE, FR, GB | Title | German: | Verfahren zum Entfernen einer Metallschicht von einem Halbleiterkörper durch reaktives Ionenätzen | English: | Process for the removal of a metallic layer from a semiconductor body by reactive ion etching | French: | Procédé pour enlever une couche métallique d'un corps semiconducteur par attaque par ions réactifs | File destroyed: | 26.08.1996 | Examination procedure | 14.12.1979 | Examination requested [1980/05] | 25.06.1980 | Despatch of a communication from the examining division (Time limit: M04) | 17.10.1980 | Reply to a communication from the examining division | 05.11.1980 | Despatch of communication of intention to grant (Approval: ) | 04.02.1981 | Communication of intention to grant the patent | 25.02.1981 | Fee for grant paid | 25.02.1981 | Fee for publishing/printing paid | Opposition(s) | 25.05.1982 | No opposition filed within time limit [ N /P ] | Fees paid | Renewal fee | 08.12.1980 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [D]US3951709 ; | FR2312114 [ ]; | JPS5127833 [ ] | [ ] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 19, nr. 3, August 1976, New York, (USA) H.C. KLUGE et al.: "Etching fine patterns in chromium and refractory metals"Seite 900 | [ ] - CHEMICAL ABSTRACTS, vol. 85, nr. 14, Oktober 1976, Columbus, Ohio, (USA) MIMURA YOSHIAKI: "Etching of titanium with fluorinc-containing gas plasma"Seite 628; & JP-A-51 027 833 (NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP.) (09-03-1976) | [ ] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 20, nr. 4, September 1977, New York, (USA) T. HANSEN et al.: "Etchant for the reactive ion etch of metals"Seite 1391 | [ ] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 124, nr. 11, November 1977, Princeton, (USA) C.J. MOGAB et al.: "Plasma etching of titanium for application to the pattering of Ti-Pd-Au metallization"Seiten 1766-1771 | [A] - JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 16, nr. 2, 1977, Tokyo, (JP) H. KINOSHITA et al.: "Anisotropic etching of silicon by gas plasma"Seiten 381-382 |