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Extract from the Register of European Patents

EP About this file: EP0031995

EP0031995 - Semiconductor RAM device comprising a matrix of static memory cells [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  12.01.1987
Database last updated on 13.07.2024
Most recent event   Tooltip12.01.1987No opposition filed within time limitpublished on 04.03.1987 [1987/10]
Applicant(s)For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku Kawasaki-shi
Kanagawa 211 / JP
[N/P]
Former [1981/28]For all designated states
FUJITSU LIMITED
1015, Kamikodanaka, Nakahara-ku
Kawasaki-shi, Kanagawa 211 / JP
Inventor(s)01 / Kurafuji, Setsuo
2-5, Edakita 2-chome Midori-ku
Yokohama-shi Kanagawa 227 / JP
[1981/28]
Representative(s)Abbott, Leonard Charles, et al
GILL JENNINGS & EVERY 53-64 Chancery Lane
London WC2A 1HN / GB
[1981/28]
Application number, filing date80304189.621.11.1980
[1981/28]
Priority number, dateJP1979015457829.11.1979         Original published format: JP 15457879
[1981/28]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0031995
Date:15.07.1981
Language:EN
[1981/28]
Type: A3 Search report 
No.:EP0031995
Date:17.11.1982
Language:EN
[1982/46]
Type: B1 Patent specification 
No.:EP0031995
Date:26.02.1986
Language:EN
[1986/09]
Search report(s)(Supplementary) European search report - dispatched on:EP16.09.1982
ClassificationIPC:G11C7/00, G11C11/40
[1981/28]
CPC:
G11C11/419 (EP,US); G11C11/412 (EP,US)
Designated contracting statesDE,   FR,   GB,   NL [1981/28]
TitleGerman:Halbleiterspeicheranordnung mit matrixartig angeordneten statischen Speicherzellen[1981/28]
English:Semiconductor RAM device comprising a matrix of static memory cells[1981/28]
French:Dispositif de mémoire à semi-conducteurs comprenant une matrice de cellules de mémoire statiques[1981/28]
Examination procedure02.12.1980Examination requested  [1981/28]
13.04.1984Despatch of a communication from the examining division (Time limit: M04)
02.08.1984Reply to a communication from the examining division
20.02.1985Despatch of communication of intention to grant (Approval: )
22.05.1985Communication of intention to grant the patent
02.08.1985Fee for grant paid
02.08.1985Fee for publishing/printing paid
Opposition(s)27.11.1986No opposition filed within time limit [1987/10]
Fees paidRenewal fee
19.11.1982Renewal fee patent year 03
03.11.1983Renewal fee patent year 04
12.11.1984Renewal fee patent year 05
09.11.1985Renewal fee patent year 06
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Documents cited:Search[X]US3879621  (CAVALIERE JOSEPH RICHARD, et al)
 [X]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 13, no. 6, November 1970, pages 1720-1722, New York, USA, D.L. CRITCHLOW: 'Sense amplifier for igfet memory'
 [Y]  - ELECTRONICS, vol. 52, no. 20, 27th September 1979, pages 131-139, New York, USA, D. HUFFMAN: 'Polysilicon-load microprocessors'
 [Y]  - IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-11, no. 5, October 1976, pages 602-609, New York, USA, J.M. SCHLAGETER et al.: 'Two 4k static 5-v ram's'
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 16, no. 9, February 1974, pages 2792-2793, New York, USA, A. FURMAN et al.: 'Sense latch circuit for memory cells'
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.