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EP0034244
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EP About this file: EP0034244
| EP0034244 - Non-destructive read-out one-FET cell memory matrix [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 02.08.1983 Database last updated on 10.07.2024 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1981/34] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Thomas, Donald Ralph Birch Ridge Road Westford Vermont 05468 / US | [1981/34] | Representative(s) | Jost, Ottokarl IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht Pascalstrasse 100 W-7000 Stuttgart 80 / DE | [N/P] |
| Former [1981/34] | Jost, Ottokarl, Dipl.-Ing. IBM Deutschland Informationssysteme GmbH Patentwesen und Urheberrecht Pascalstrasse 100 W-7000 Stuttgart 80 / DE | Application number, filing date | 81100082.7 | 08.01.1981 | [1981/34] | Priority number, date | US19800116736 | 30.01.1980 Original published format: US 116736 | [1981/34] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0034244 | Date: | 26.08.1981 | Language: | EN | [1981/34] | Type: | A3 Search report | No.: | EP0034244 | Date: | 16.09.1981 | Language: | EN | [1981/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.07.1981 | Classification | IPC: | G11C11/24, H01L27/10, H01L29/10, H01L29/78 | [1981/34] | CPC: |
H01L29/7827 (EP,US);
G11C11/404 (EP,US);
H01L29/105 (EP,US);
H10B12/00 (EP,US)
| Designated contracting states | DE, FR, GB [1981/34] | Title | German: | Zerstörungsfrei lesbare 1-FET-Speicherzellenmatrix | [1981/34] | English: | Non-destructive read-out one-FET cell memory matrix | [1981/34] | French: | Matrice de cellules de mémoire à un transistor à effet de champ et lecture non-destructive | [1981/34] | File destroyed: | 18.06.1989 | Examination procedure | 05.10.1981 | Examination requested [1981/50] | 26.10.1982 | Despatch of a communication from the examining division (Time limit: M04) | 15.04.1983 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [1983/40] | 27.06.1983 | Application deemed to be withdrawn, date of legal effect [1983/40] | Fees paid | Penalty fee | Additional fee for renewal fee | 31.01.1983 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | US4014036 [ ] (HO IRVING T, et al); | US4109270 [ ] (VON BASSE PAUL WERNER, et al); | US4116720 [ ] (VINSON MARK ALEXANDER); | [A]US4126881 (BASSE P [DE], et al); | [A]GB2006523 (MOHSEN A M); | [A]GB2011175 (AMERICAN MICRO SYST); | WO7900474 [ ] (ERB D) | [ ] - IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 15, No. 2, July 1972, Armonk, US HO et al. "Reach-through mode operation of single-electrode double-threshold charge-coupled memory cell"pages 412-413. | [ ] - IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. ED 25, No. 10, October 1978, New York, US JENNE et al. "A theoretical and experimental analysis of the buried-source VMOS dynamic RAM cell"pages 1204-1213. | [A] - IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 14, No. 4, September 1971, Armonk, US KEMERER "Storage cell using double-threshold FET'S"pages 1077-1078. | [A] - IEEE JOURNAL OF SOLID-STATE CIRCUITS, Vol. SC 13, No. 5, October 1978, New YorkUS HOFFMANN et al. "VMOS technology applied to dynamic RAM's" pages 617-622. |