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Extract from the Register of European Patents

EP About this file: EP0040436

EP0040436 - Semiconductor device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  21.05.1987
Database last updated on 20.11.2024
Most recent event   Tooltip05.10.2005Change: Appeal number 
Applicant(s)For all designated states
Kabushiki Kaisha Toshiba
72, Horikawa-cho, Saiwai-ku Kawasaki-shi
Kanagawa-ken 210-8572 / JP
[N/P]
Former [1981/47]For all designated states
KABUSHIKI KAISHA TOSHIBA
72, Horikawa-cho, Saiwai-ku
Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP
Inventor(s)01 / Egawa, Hideharu
4-34-3, Seta Setagaya-ku
Tokyo / JP
[1981/47]
Representative(s)Henkel & Partner mbB
Patentanwaltskanzlei, Rechtsanwaltskanzlei
Maximiliansplatz 21
80333 München / DE
[N/P]
Former [1981/47]Henkel, Feiler, Hänzel & Partner
Möhlstrasse 37
D-81675 München / DE
Application number, filing date81103893.420.05.1981
[1981/47]
Priority number, dateJP1980006697120.05.1980         Original published format: JP 6697180
JP1980006697220.05.1980         Original published format: JP 6697280
[1981/47]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0040436
Date:25.11.1981
Language:EN
[1981/47]
Type: A3 Search report 
No.:EP0040436
Date:13.01.1982
Language:EN
[1982/02]
Type: B1 Patent specification 
No.:EP0040436
Date:30.04.1986
Language:EN
[1986/18]
Search report(s)(Supplementary) European search report - dispatched on:EP11.11.1981
ClassificationIPC:H01L27/08, H01L27/12, H03K19/094
[1981/47]
CPC:
H01L21/86 (EP,US); H01L27/092 (EP,US); H01L27/12 (EP,US);
H03K19/09446 (EP,US); H03K19/09487 (EP,US); H03K3/356 (EP,US);
Y10S257/903 (EP,US) (-)
Designated contracting statesDE,   FR,   GB,   NL [1981/47]
TitleGerman:Halbleiter-Bauelement[1981/47]
English:Semiconductor device[1981/47]
French:Dispositif à semiconducteurs[1981/47]
Examination procedure21.05.1981Examination requested  [1981/47]
23.03.1984Despatch of a communication from the examining division (Time limit: M04)
24.07.1984Reply to a communication from the examining division
02.04.1985Despatch of communication of intention to grant (Approval: )
21.06.1985Communication of intention to grant the patent
23.09.1985Fee for grant paid
23.09.1985Fee for publishing/printing paid
Appeal following examination22.07.1987Appeal received No.  J0030/94
21.09.1987Statement of grounds filed
09.10.1995Result of appeal procedure: other kind of disposal
Divisional application(s)EP84100881.6  / EP0122371
Opposition(s)31.01.1987No opposition filed within time limit [1987/28]
Fees paidRenewal fee
27.05.1983Renewal fee patent year 03
25.05.1984Renewal fee patent year 04
29.05.1985Renewal fee patent year 05
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Documents cited:Search[A]US4035829  (IPRI ALFRED CHARLES, et al)
    [ ] - IBM Technical Disclosure Bulletin, Vol. 13, No. 12, May 1971, New York GAENSSLEN, "Complementary Four Device FET Memory Cell" pages 3614 to 3615
 [A]  - Computer Design, Vol. 17, No. 9, September 1978, Arlington SMITH et al., "CMOS on Sapphire" pages 194, 196, 198
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.