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EP0055558
European procedure
Extract from the Register of European Patents
EP About this file: EP0055558
| EP0055558 - Method of manufacturing a semiconductor device [Right-click to bookmark this link] | |||
| Former [1982/27] | Semiconductor device | ||
| [1986/32] | Status | No opposition filed within time limit Status updated on 03.06.1987 Database last updated on 22.08.2024 | Most recent event Tooltip | 09.07.1988 | Lapse of the patent in a contracting state | published on 24.08.1988 [1988/34] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1982/27] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Toyokura, Nobuo 1569-1, Shinsaku Takatsu-ku Kawasaki-shi Kanagawa 213 / JP | 02 /
Taguchi, Masao 4-3-4-201, Araisono Sagamihara-shi Kanagawa 228 / JP | [1982/27] | Representative(s) | Sunderland, James Harry, et al Haseltine Lake LLP Lincoln House 300 High Holborn London WC1V 7JH / GB | [N/P] |
| Former [1982/27] | Sunderland, James Harry, et al HASELTINE LAKE & CO Hazlitt House 28 Southampton Buildings Chancery Lane London WC2A 1AT / GB | Application number, filing date | 81305941.7 | 18.12.1981 | [1982/27] | Priority number, date | JP19800189056 | 29.12.1980 Original published format: JP 18905680 | [1982/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0055558 | Date: | 07.07.1982 | Language: | EN | [1982/27] | Type: | A3 Search report | No.: | EP0055558 | Date: | 05.10.1983 | Language: | EN | [1983/40] | Type: | B1 Patent specification | No.: | EP0055558 | Date: | 06.08.1986 | Language: | EN | [1986/32] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.08.1983 | Classification | IPC: | H01L21/225, H01L29/94, H01L27/10, H01L21/314, // G11C11/24 | [1982/27] | CPC: |
H01L21/02183 (EP,US);
H01L21/02181 (EP,US);
H01L21/02186 (EP,US);
H01L21/02189 (EP,US);
H01L21/2254 (EP,US);
H01L21/2255 (EP,US);
H01L21/28185 (EP,US);
H01L21/28229 (EP,US);
H01L21/31683 (US);
H01L21/3185 (US);
H01L27/04 (EP,US);
H01L29/517 (EP,US);
H01L29/94 (EP,US);
H10B12/03 (EP,US);
H10B12/30 (EP,US);
| Designated contracting states | DE, FR, GB, NL [1982/27] | Title | German: | Verfahren zur Herstellung einer Halbleiteranordnung | [1986/32] | English: | Method of manufacturing a semiconductor device | [1986/32] | French: | Méthode de fabrication d'un dispositif semiconducteur | [1986/32] |
| Former [1982/27] | Halbleiteranordnung | ||
| Former [1982/27] | Semiconductor device | ||
| Former [1982/27] | Dispositif semiconducteur | File destroyed: | 12.06.1999 | Examination procedure | 09.11.1983 | Examination requested [1984/03] | 17.08.1984 | Despatch of a communication from the examining division (Time limit: M05) | 24.01.1985 | Reply to a communication from the examining division | 20.03.1985 | Despatch of a communication from the examining division (Time limit: M01) | 16.04.1985 | Reply to a communication from the examining division | 14.10.1985 | Despatch of communication of intention to grant (Approval: ) | 30.01.1986 | Communication of intention to grant the patent | 20.02.1986 | Fee for grant paid | 20.02.1986 | Fee for publishing/printing paid | Opposition(s) | 07.05.1987 | No opposition filed within time limit [1987/30] | Fees paid | Renewal fee | 12.12.1983 | Renewal fee patent year 03 | 14.12.1984 | Renewal fee patent year 04 | 11.12.1985 | Renewal fee patent year 05 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 06.08.1986 | [1988/34] | Documents cited: | Search | [Y]JP55065458 ; | [Y]JP52113181 ; | [A]DE2555187 (SIEMENS AG); | [X]US4112575 (FU HORNG-SEN, et al) |