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EP0060408
European procedure
Extract from the Register of European Patents
EP About this file: EP0060408
| EP0060408 - Electrically erasable programmable read only memory [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.06.1986 Database last updated on 04.06.2024 | Most recent event Tooltip | 24.06.1986 | No opposition filed within time limit | published on 13.08.1986 [1986/33] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1982/38] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Wada, Masashi Toshiba-Isogo-dairoku-ryo, 2-8-2 Shiomidai Isogo-ku Yokohama-shi / JP | [1982/38] | Representative(s) | Henkel & Partner mbB Patentanwaltskanzlei, Rechtsanwaltskanzlei Maximiliansplatz 21 80333 München / DE | [N/P] |
| Former [1983/22] | Henkel, Feiler, Hänzel & Partner Möhlstrasse 37 D-81675 München / DE | ||
| Former [1982/38] | Patentanwälte Henkel, Pfenning, Feiler, Hänzel & Meinig Möhlstrasse 37 D-8000 München 80 / DE | Application number, filing date | 82101283.8 | 19.02.1982 | [1982/38] | Priority number, date | JP19810026911 | 27.02.1981 Original published format: JP 2691181 | [1982/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0060408 | Date: | 22.09.1982 | Language: | EN | [1982/38] | Type: | B1 Patent specification | No.: | EP0060408 | Date: | 07.08.1985 | Language: | EN | [1985/32] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 08.07.1982 | Classification | IPC: | H01L29/60, G11C11/34 | [1982/38] | CPC: |
G11C16/0416 (EP,US);
H01L29/7883 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1982/38] | Title | German: | Elektrisch löschbares und programmierbares Speicherelement zum dauerhaften Speichern | [1982/38] | English: | Electrically erasable programmable read only memory | [1982/38] | French: | Mémoire non-volatile, électriquement effaçable et programmable | [1982/38] | Examination procedure | 12.01.1983 | Examination requested [1983/13] | 07.12.1983 | Despatch of a communication from the examining division (Time limit: M04) | 10.04.1984 | Reply to a communication from the examining division | 29.10.1984 | Despatch of communication of intention to grant (Approval: ) | 15.01.1985 | Communication of intention to grant the patent | 03.04.1985 | Fee for grant paid | 03.04.1985 | Fee for publishing/printing paid | Opposition(s) | 08.05.1986 | No opposition filed within time limit [1986/33] | Fees paid | Renewal fee | 27.02.1984 | Renewal fee patent year 03 | 11.02.1985 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]DE2643947 (SIEMENS AG); | [A]US3728695 (FROHMAN BENTCHKOWSKY D) | [A] - INTERNATIONAL ELECTRON DEVICES MEETING, December 8-9-10, 1980, IEEE, Washington D.C. (US), J. KUPEC et al.:"Triple level poly silicon E2prom with single transistor per bit", pages 602-606 | [A] - ELECTRONICS INTERNATIONAL, vol.52, no.10, May 10, 1979, New York (US), C. WALLACE:"Electrically erasable memory behaves like a fast, nonvolatile RAM", pages 128-131 | Examination | EP0016386 | - IEEE Transactions on Electron Devices (1977,05) pages 600-610. |