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Extract from the Register of European Patents

EP About this file: EP0085767

EP0085767 - Voltage level responsive circuit [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  19.05.1989
Database last updated on 21.08.2024
Most recent event   Tooltip19.05.1989No opposition filed within time limitpublished on 05.07.1989 [1989/27]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1983/33]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Lam, Chung Hon
23 Hillside Drive
Williston Vermont 05495 / US
02 / Peterson, Charles William
37 Greenfield Road
Essex Junction Vermont 05452 / US
[1983/33]
Representative(s)Mönig, Anton
IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht
70548 Stuttgart / DE
[N/P]
Former [1985/15]Mönig, Anton, Dipl.-Ing.
IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht
D-70548 Stuttgart / DE
Former [1983/33]Busch, Robert, Dipl.-Ing.
Schönaicher Strasse 220
D-7030 Böblingen / DE
Application number, filing date82111113.502.12.1982
[1983/33]
Priority number, dateUS1982034643105.02.1982         Original published format: US 346431
[1983/33]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0085767
Date:17.08.1983
Language:EN
[1983/33]
Type: A3 Search report 
No.:EP0085767
Date:08.01.1986
Language:EN
[1986/02]
Type: B1 Patent specification 
No.:EP0085767
Date:20.07.1988
Language:EN
[1988/29]
Search report(s)(Supplementary) European search report - dispatched on:EP07.11.1985
ClassificationIPC:G11C17/00
[1983/33]
CPC:
G11C17/12 (EP,US)
Designated contracting statesDE,   FR,   GB [1983/33]
TitleGerman:Spannungspegelempfindliche Schaltung[1983/33]
English:Voltage level responsive circuit[1983/33]
French:Circuit sensible à un niveau de tension[1983/33]
File destroyed:03.03.2001
Examination procedure15.12.1983Examination requested  [1984/08]
17.02.1987Despatch of a communication from the examining division (Time limit: M04)
10.06.1987Reply to a communication from the examining division
11.11.1987Despatch of communication of intention to grant (Approval: Yes)
19.01.1988Communication of intention to grant the patent
29.01.1988Fee for grant paid
29.01.1988Fee for publishing/printing paid
Opposition(s)21.04.1989No opposition filed within time limit [1989/27]
Fees paidRenewal fee
11.12.1984Renewal fee patent year 03
13.12.1985Renewal fee patent year 04
12.12.1986Renewal fee patent year 05
11.12.1987Renewal fee patent year 06
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Documents cited:Search[Y]EP0015070  (FUJITSU LTD [JP]);
 [YD]US4242604  (SMITH FREDERICK J [US]);
 [XP]EP0052010  (FUJITSU LTD [JP])
 [Y]  - IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-26, no. 4, April 1976, pages 560-563, IEEE, New York, US; K. NATORI et al.: "A 64 kbit MOS dynamic random access memory"
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 23, no. 11, April 1981, pages 4856-4857, New York, US; J.E. SELLECK et al.: "Accessing circuitry and method for a read-only memory system"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.