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Extract from the Register of European Patents

EP About this file: EP0073167

EP0073167 - Logical bistable circuit using low threshold voltage field effect transistors, and memory device using such a circuit [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  21.12.1984
Database last updated on 08.10.2024
Most recent event   Tooltip07.07.2007Change - inventorpublished on 08.08.2007  [2007/32]
Applicant(s)For all designated states
THOMSON-CSF
173, Boulevard Haussmann
F-75008 Paris / FR
[1983/09]
Inventor(s)01 / Pham, Ngu Tung
THOMSON-CSF SCPI 173, bld Haussmann
F-75379 Paris Cedex 08 / FR
[1983/09]
Representative(s)Lepercque, Jean, et al
Thomson-CSF Propriété Intellectuelle
92045 PARIS LA DEFENSE CEDEX 67 / FR
[N/P]
Former [1983/09]Lepercque, Jean, et al
THOMSON-CSF SCPI
F-92045 PARIS LA DEFENSE CEDEX 67 / FR
Application number, filing date82401543.217.08.1982
[1983/09]
Priority number, dateFR1981001611421.08.1981         Original published format: FR 8116114
[1983/09]
Filing languageFR
Procedural languageFR
PublicationType: A1 Application with search report 
No.:EP0073167
Date:02.03.1983
Language:FR
[1983/09]
Search report(s)(Supplementary) European search report - dispatched on:EP10.01.1983
ClassificationIPC:G11C11/40, H03K3/353
[1983/09]
CPC:
G11C11/40 (EP,US); G11C11/412 (EP,US); H03K3/3565 (EP,US)
Designated contracting statesDE,   GB,   IT,   NL,   SE [1983/09]
TitleGerman:Logischer bistabiler Schaltkreis mit Feldeffekttransistoren geringer Schwellspannung und Speichervorrichtung mit einem solchen Schaltkreis[1983/09]
English:Logical bistable circuit using low threshold voltage field effect transistors, and memory device using such a circuit[1983/09]
French:Circuit logique bistable utilisant des transistors à effet de champ à faible tension de seuil, et dispositif de mémorisation comportant un tel circuit[1983/09]
File destroyed:13.07.1991
Examination procedure10.03.1983Examination requested  [1983/20]
07.03.1984Despatch of a communication from the examining division (Time limit: M04)
19.05.1984Reply to a communication from the examining division
17.09.1984Despatch of communication of intention to grant (Approval: )
09.10.1984Communication of intention to grant the patent
15.12.1984Application withdrawn by applicant  [1985/08]
Fees paidRenewal fee
20.07.1984Renewal fee patent year 03
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Documents cited:Search[Y]US4000427  (HOFFMANN KURT);
 [YD]EP0021858  (THOMSON CSF [FR]);
 [A]EP0033033  (FUJITSU LTD [JP]);
 [A]US4092735  (MCELROY DAVID J)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.