Extract from the Register of European Patents

EP About this file: EP0087426

EP0087426 - LATERAL EPITAXIAL GROWTH BY SEEDED SOLIDIFICATION [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  23.05.1990
Database last updated on 09.04.2026
Most recent event   Tooltip23.05.1990No opposition filed within time limitpublished on 11.07.1990 [1990/28]
Applicant(s)For all designated states
MASSACHUSETTS INSTITUTE OF TECHNOLOGY
77 Massachusetts Avenue
Cambridge, MA 02139 / US
[1983/36]
Inventor(s)01 / TSAUR, Bor-Yeu
17 Brattle Street Apartment No 1
Arlington, MA 02174 / US
02 / FAN, John C. C.
239 South Street
Chestnut Hill, MA 02167 / US
03 / GEIS, Michael W.
8 Tuttle Drive
Acton, MA 01720 / US
[1983/36]
Representative(s)Holdcroft, James Gerald, et al
Graham Watt & Co LLP
St Botolph's House
7-9 St Botolph's Road
Sevenoaks
Kent TN13 3AJ / GB
[N/P]
Former [1983/36]Holdcroft, James Gerald, Dr., et al
Graham Watt & Co., Riverhead
Sevenoaks, Kent TN13 2BN / GB
Application number, filing date82901665.814.04.1982
[1983/36]
WO1982US00465
Priority number, dateUS1981025487116.04.1981         Original published format: US 254871
US1982035928418.03.1982         Original published format: US 359284
[1983/36]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO8203639
Date:28.10.1982
[1982/26]
Type: A1 Application with search report 
No.:EP0087426
Date:07.09.1983
Language:EN
The application published by WIPO in one of the EPO official languages on 28.10.1982 takes the place of the publication of the European patent application.
[1983/36]
Type: B1 Patent specification 
No.:EP0087426
Date:26.07.1989
Language:EN
[1989/30]
Search report(s)(Supplementary) European search report - dispatched on:EP26.09.1985
ClassificationIPC:C30B13/06
[1983/36]
CPC:
H10P14/3238 (EP); H10P14/3806 (US); C30B13/00 (EP);
C30B13/06 (EP); C30B27/00 (EP); C30B29/60 (EP);
H10P14/2905 (EP); H10P14/2911 (EP); H10P14/3411 (EP);
H10P14/3421 (EP); H10P14/382 (EP); H10P95/90 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [1983/41]
Former [1983/36]AT,  BE,  CH,  DE,  FR,  GB,  LI,  LU,  NL,  SE 
TitleGerman:LATERALES EPITAXIEWACHSTUM DURCH GEIMPFTE VERFESTIGUNG[1983/36]
English:LATERAL EPITAXIAL GROWTH BY SEEDED SOLIDIFICATION[1983/36]
French:CROISSANCE EPITAXIALE LATERALE A L'AIDE D'UNE SOLIDIFICATION PROVOQUEE PAR DES GERMES[1983/36]
Entry into regional phase20.12.1982National basic fee paid 
20.12.1982Search fee paid 
20.12.1982Designation fee(s) paid 
30.03.1983Examination fee paid 
Examination procedure30.03.1983Examination requested  [1983/36]
19.04.1983Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, LU, NL, SE
01.06.1983Despatch of communication of loss of particular rights: Claims {1}
29.06.1983Loss of particular rights, legal effect: designated state(s)
11.08.1983Loss of particular rights, legal effect: Claims
08.01.1987Despatch of a communication from the examining division (Time limit: M04)
16.11.1987Despatch of a communication from the examining division (Time limit: M06)
09.05.1988Reply to a communication from the examining division
21.09.1988Despatch of communication of intention to grant (Approval: Yes)
22.11.1988Communication of intention to grant the patent
28.01.1989Fee for grant paid
28.01.1989Fee for publishing/printing paid
Opposition(s)30.04.1990No opposition filed within time limit [1990/28]
Fees paidRenewal fee
23.03.1984Renewal fee patent year 03
09.04.1985Renewal fee patent year 04
19.04.1986Renewal fee patent year 05
18.04.1987Renewal fee patent year 06
12.04.1988Renewal fee patent year 07
15.04.1989Renewal fee patent year 08
Penalty fee
Penalty fee Rule 85a EPC 1973
17.01.1983AT   M02   Not yet paid
17.01.1983BE   M02   Not yet paid
17.01.1983CH   M02   Not yet paid
17.01.1983LU   M02   Not yet paid
17.01.1983NL   M02   Not yet paid
17.01.1983SE   M02   Not yet paid
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Documents cited:Search[A]   APPLIED PHYSICS LETTERS, vol. 37, no. 6, September 16, 1980, pages 560-562, New York, US; R.W. McCLELLAND et al.: "A technique for producing epitaxial films on reuseable substrates" [A]
   APPLIED PHYSICS LETTERS, vol. 37, no. 6, September 16, 1980, pages 560-562, New York, US; R.W. McCLELLAND et al.: "A technique for producing epitaxial films on reuseable substrates"
International search[A]   Appl. Phys. Lett, issued 01 September 1980, GEISS et al, Silicon Graphoepitaxy Using a Strip-Heater Oven. see pages 454-456. [A]
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