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EP0087573
European procedure
Extract from the Register of European Patents
EP About this file: EP0087573
| EP0087573 - Method of making complementary field effect transistors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 14.02.1990 Database last updated on 09.04.2026 | Most recent event Tooltip | 07.03.1997 | Lapse of the patent in a contracting state | published on 23.04.1997 [1997/17] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1983/36] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Dash, Somanath 4 Twin Brook Court South Burlington, VT 05452 / US | 02 /
Garnache, Richard Raymond 1400 Spear Street South Burlington, VT 05452 / US | 03 /
Troutman, Ronald Roy 7 Rustic Drive Essex Junction, VT 05452 / US | [1983/36] | Representative(s) | Gaugel, Heinz Schönaicher Strasse 220 D-7030 Böblingen / DE | [N/P] |
| Former [1983/36] | Gaugel, Heinz, Dipl.-Ing. Schönaicher Strasse 220 D-7030 Böblingen / DE | Application number, filing date | 83100523.6 | 21.01.1983 | [1983/36] | Priority number, date | US19820352990 | 26.02.1982 Original published format: US 352990 | [1983/36] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0087573 | Date: | 07.09.1983 | Language: | EN | [1983/36] | Type: | A3 Search report | No.: | EP0087573 | Date: | 17.09.1986 | Language: | EN | [1986/38] | Type: | B1 Patent specification | No.: | EP0087573 | Date: | 12.04.1989 | Language: | EN | [1989/15] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.07.1986 | Classification | IPC: | H01L21/82 | [1983/36] | CPC: |
H10D84/0177 (EP,US);
H10D84/038 (EP,US);
H10D30/6739 (EP,US);
H10D64/668 (EP,US);
H10D86/00 (EP,US)
| Designated contracting states | DE, FR, GB [1983/36] | Title | German: | Verfahren zum Herstellen komplementärer Feldeffekttransistoren | [1983/36] | English: | Method of making complementary field effect transistors | [1983/36] | French: | Procédé de fabrication des transistors à effet de champ complémentaires | [1983/36] | Examination procedure | 15.12.1983 | Examination requested [1984/08] | 07.03.1988 | Despatch of a communication from the examining division (Time limit: M04) | 07.05.1988 | Reply to a communication from the examining division | 15.07.1988 | Despatch of communication of intention to grant (Approval: Yes) | 30.09.1988 | Communication of intention to grant the patent | 10.10.1988 | Fee for grant paid | 10.10.1988 | Fee for publishing/printing paid | Opposition(s) | 13.01.1990 | No opposition filed within time limit [1990/14] | Fees paid | Renewal fee | 29.01.1985 | Renewal fee patent year 03 | 24.01.1986 | Renewal fee patent year 04 | 16.01.1987 | Renewal fee patent year 05 | 26.01.1988 | Renewal fee patent year 06 | 27.01.1989 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X] JP52070779 | [X] PATENTS ABSTRACTS OF JAPAN, vol. 1, no. 135, 9th November 1977, page 6295 E 77; & JP-A-52 070 779 (FUJITSU K.K.) 06-13-1977 [X] | [A] IBM TECHNICAL DISCLOSURE BULLETIN, vol. 23, no. 12, May 1981, pages 5283-5286, New York, US; S. DASH et al.: "CMOS field-effect transistors with P channel devices using silicides" [A] |