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EP0087581
European procedure
Extract from the Register of European Patents
EP About this file: EP0087581
| EP0087581 - Method of making silicon oxide layers [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.04.1988 Database last updated on 02.08.2024 | Most recent event Tooltip | 15.03.1989 | Lapse of the patent in a contracting state | published on 03.05.1989 [1989/18] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
| Former [1983/36] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Grasser, Leo, Dipl.-Phys. Ottobrunnerstrasse 101 D-8000 München 83 / DE | [1983/36] | Application number, filing date | 83100646.5 | 25.01.1983 | [1983/36] | Priority number, date | DE19823206376 | 22.02.1982 Original published format: DE 3206376 | [1983/36] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0087581 | Date: | 07.09.1983 | Language: | DE | [1983/36] | Type: | B1 Patent specification | No.: | EP0087581 | Date: | 13.05.1987 | Language: | DE | [1987/20] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.06.1983 | Classification | IPC: | H01L21/316 | [1983/36] | CPC: |
H01L21/02238 (EP,US);
H01L21/02255 (EP,US);
H01L21/31662 (US)
| Designated contracting states | AT, CH, DE, FR, GB, IT, LI, SE [1983/36] | Title | German: | Verfahren zur Herstellung von Siliziumoxidschichten | [1983/36] | English: | Method of making silicon oxide layers | [1983/36] | French: | Procédé de fabrication de couches d'oxyde de silicium | [1983/36] | Examination procedure | 27.03.1984 | Examination requested [1984/24] | 28.05.1986 | Despatch of communication of intention to grant (Approval: ) | 30.09.1986 | Communication of intention to grant the patent | 09.10.1986 | Fee for grant paid | 09.10.1986 | Fee for publishing/printing paid | Opposition(s) | 16.02.1988 | No opposition filed within time limit [1988/21] | Fees paid | Renewal fee | 29.01.1985 | Renewal fee patent year 03 | 28.01.1986 | Renewal fee patent year 04 | 27.01.1987 | Renewal fee patent year 05 | Penalty fee | Penalty fee Rule 85b EPC 1973 | 07.03.1984 | M02 Fee paid on 27.03.1984 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | SE | 31.05.1987 | [1989/18] | Documents cited: | Search | [A]US4139658 (COHEN SEYMOUR H, et al); | [A]US4149905 (LEVINSTEIN HYMAN J, et al) | [AD] - JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Band 127, Nr. 1, Januar 1980, New York C. HASHIMOTO et al. "A method of forming thin and highly reliable gate oxides" Seiten 129-135 |