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EP0088421
European procedure
Extract from the Register of European Patents
EP About this file: EP0088421
| EP0088421 - Semiconductor memory device having tunnel diodes [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 09.01.1992 Database last updated on 22.05.2024 | Most recent event Tooltip | 05.10.2005 | Change: Appeal number | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1983/37] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Matsukawa, Naohiro Toshiba-Kikuna-ryo 217 Mamedo-cho Kohoku-ku Yokohama-shi / JP | [1983/37] | Representative(s) | Henkel & Partner mbB Patentanwaltskanzlei, Rechtsanwaltskanzlei Maximiliansplatz 21 80333 München / DE | [N/P] |
| Former [1983/37] | Henkel, Feiler, Hänzel & Partner Möhlstrasse 37 D-81675 München / DE | Application number, filing date | 83102232.2 | 07.03.1983 | [1983/37] | Priority number, date | JP19820036019 | 08.03.1982 Original published format: JP 3601982 | [1983/37] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0088421 | Date: | 14.09.1983 | Language: | EN | [1983/37] | Type: | A3 Search report | No.: | EP0088421 | Date: | 26.11.1986 | Language: | EN | [1986/48] | Type: | B1 Patent specification | No.: | EP0088421 | Date: | 06.03.1991 | Language: | EN | [1991/10] | Type: | B1 RE Reissue of patent specification | No.: | EP0088421 | Date: | 19.08.1991 | [1991/41] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.10.1986 | Classification | IPC: | G11C11/38 | [1991/10] | CPC: |
G11C11/38 (EP,US)
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| Former IPC [1986/47] | G11C11/34, G11C11/38 | ||
| Former IPC [1983/37] | G11C11/34 | Designated contracting states | DE, FR, GB [1983/37] | Title | German: | Halbleiterspeicheranordnung mit Tunneldioden | [1983/37] | English: | Semiconductor memory device having tunnel diodes | [1983/37] | French: | Dispositif de mémoire semi-conductrice à diodes tunnel | [1983/37] | Examination procedure | 05.04.1983 | Examination requested [1983/37] | 11.09.1987 | Despatch of a communication from the examining division (Time limit: M04) | 26.10.1987 | Reply to a communication from the examining division | 18.02.1988 | Despatch of a communication from the examining division (Time limit: M06) | 23.08.1988 | Reply to a communication from the examining division | 10.05.1989 | Despatch of communication that the application is refused, reason: substantive examination {1} | 10.07.1990 | Date of oral proceedings | 12.07.1990 | Minutes of oral proceedings despatched | 13.08.1990 | Despatch of communication of intention to grant (Approval: Yes) | 04.09.1990 | Communication of intention to grant the patent | 23.11.1990 | Fee for grant paid | 23.11.1990 | Fee for publishing/printing paid | Appeal following examination | 22.06.1989 | Appeal received No. T0600/89 | 24.08.1989 | Statement of grounds filed | 10.07.1990 | Result of appeal procedure: remittal for grant | Opposition(s) | 07.12.1991 | No opposition filed within time limit [1992/09] | Fees paid | Renewal fee | 13.03.1985 | Renewal fee patent year 03 | 15.03.1986 | Renewal fee patent year 04 | 09.03.1987 | Renewal fee patent year 05 | 07.03.1988 | Renewal fee patent year 06 | 13.03.1989 | Renewal fee patent year 07 | 15.03.1990 | Renewal fee patent year 08 | 17.12.1990 | Renewal fee patent year 09 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US4187602 (MCELROY DAVID J [US]) | [A] - ELECTRONICS, vol. 33, no. 22, 27th May 1960, pages 75-84, New York, US; "Research and engineering frontiers of the electronics technology" | [A] - K.N. CHANG: "Parametric and tunnel diodes", 1964, pages 169-171, Englewood Cliffs, New Jersey, US; "Memory elements" |