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EP0090963
European procedure
Extract from the Register of European Patents
EP About this file: EP0090963
| EP0090963 - Method for making polycrystalline silicon film resistors [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 12.07.1990 Database last updated on 01.04.2026 | Most recent event Tooltip | 12.07.1990 | No opposition filed within time limit | published on 29.08.1990 [1990/35] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [1983/41] | For all designated states International Business Machines Corporation Old Orchard Road Armonk, N.Y. 10504 / US | Inventor(s) | 01 /
Glang, Reinhard David Road Somers New York 10589 / US | 02 /
Ku, San-Mei 3 Carnelli Court Poughkeepsie New York 12603 / US | 03 /
Schmitt, Alfred Schramberger Strasse 45 D-7030 Böblingen / DE | [1989/38] |
| Former [1983/41] | 01 /
Glang, Reinhard David Road Somers New York 10589 / US | ||
| 02 /
Ku, San-Mei 3 Carnelli Court Poughkeepsie New York 12603 / US | |||
| 03 /
Schmitt, Alfred Schramberger Strasse 45 D-7030 Boeblingen / DE | Representative(s) | Kreidler, Eva-Maria Schönaicher Strasse 220 D-7030 Böblingen / DE | [N/P] |
| Former [1983/41] | Kreidler, Eva-Maria, Dr. rer. nat. Schönaicher Strasse 220 D-7030 Böblingen / DE | Application number, filing date | 83102546.5 | 15.03.1983 | [1983/41] | Priority number, date | US19820364371 | 01.04.1982 Original published format: US 364371 | [1983/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0090963 | Date: | 12.10.1983 | Language: | EN | [1983/41] | Type: | A3 Search report | No.: | EP0090963 | Date: | 21.11.1985 | Language: | EN | [1985/47] | Type: | B1 Patent specification | No.: | EP0090963 | Date: | 20.09.1989 | Language: | EN | [1989/38] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 19.09.1985 | Classification | IPC: | H01L21/31 | [1983/41] | CPC: |
H10D1/47 (EP,US);
H10D84/0112 (EP,US);
H10D84/038 (EP,US);
H10P32/302 (EP,US)
| Designated contracting states | DE, FR, GB [1983/41] | Title | German: | Verfahren zur Herstellung von Schichtwiderständen aus polykristallinem Silicium | [1989/38] | English: | Method for making polycrystalline silicon film resistors | [1983/41] | French: | Procédé pour la fabrication de résistances en couches en silicium polycristallin | [1983/41] |
| Former [1983/41] | Verfahren zur Herstellung von Schichtwiderständen aus polykristallinem Silizium | Examination procedure | 18.02.1984 | Examination requested [1984/17] | 22.04.1988 | Despatch of a communication from the examining division (Time limit: M04) | 19.08.1988 | Reply to a communication from the examining division | 06.12.1988 | Despatch of communication of intention to grant (Approval: No) | 01.03.1989 | Despatch of communication of intention to grant (Approval: later approval) | 08.03.1989 | Communication of intention to grant the patent | 18.03.1989 | Fee for grant paid | 18.03.1989 | Fee for publishing/printing paid | Opposition(s) | 21.06.1990 | No opposition filed within time limit [1990/35] | Request for further processing for: | 12.08.1986 | Request for further processing filed | 12.08.1986 | Full payment received (date of receipt of payment) Request granted | 24.09.1986 | Decision despatched | Fees paid | Renewal fee | 13.03.1985 | Renewal fee patent year 03 | 25.03.1986 | Renewal fee patent year 04 | 27.03.1987 | Renewal fee patent year 05 | 29.03.1988 | Renewal fee patent year 06 | 22.03.1989 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.ED-28, no.7, July 1981, pages 818-830; IEEE, New York, US N.C-C. LU et al.: "Modeling and optimization of monolithic polycrystalline silicon resistors." [A] | [A] EXTENDED ABSTRACTS OF THE JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.81-2, October 1981, pages 992-994; Pennington, New Jersey, US L. BALDI et al.: "Dopant segregation in polycristalline silicon heavily doped with arsenic." [A] | [A] JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.128, no.9, September 1981, pages 2009-2014; Manchester, New Hampshire, US J.P. COLINGE et al.: "Grain size and resistivity of LPCVD polycristalline silicon films." [A] |