| EP0099983 - Semiconductor memory device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 11.01.1990 Database last updated on 11.04.2026 | Most recent event Tooltip | 11.01.1990 | No opposition filed within time limit | published on 28.02.1990 [1990/09] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [1984/06] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Ariizumi, Shoji 1-11-10-202, Tamazutsumi Setagaya-ku Tokyo / JP | 02 /
Segawa, Makoto 1-16-3, Tamazutsumi Setagaya-ku Tokyo / JP | 03 /
Masuoka, Fujio 1-14-6, Takeyama Midori-ku Yokohama-shi / JP | [1984/06] | Representative(s) | Lehn, Werner, et al Hoffmann Eitle, Patent- und Rechtsanwälte, Postfach 81 04 20 81904 München / DE | [N/P] |
| Former [1984/06] | Lehn, Werner, Dipl.-Ing., et al Hoffmann, Eitle & Partner, Patentanwälte, Postfach 81 04 20 D-81904 München / DE | Application number, filing date | 83105818.5 | 14.06.1983 | [1984/06] | Priority number, date | JP19820125344 | 19.07.1982 Original published format: JP 12534482 | [1984/06] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0099983 | Date: | 08.02.1984 | Language: | EN | [1984/06] | Type: | A3 Search report | No.: | EP0099983 | Date: | 27.11.1985 | Language: | EN | [1985/48] | Type: | B1 Patent specification | No.: | EP0099983 | Date: | 08.03.1989 | Language: | EN | [1989/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.09.1985 | Classification | IPC: | H01L27/10, G11C11/40 | [1984/06] | CPC: |
H10B10/15 (EP,US);
Y10S257/903 (EP,US)
| Designated contracting states | DE, FR, GB [1984/06] | Title | German: | Halbleiterspeichervorrichtung | [1984/06] | English: | Semiconductor memory device | [1984/06] | French: | Dispositif de mémoire à semi-conducteur | [1984/06] | Examination procedure | 14.06.1983 | Examination requested [1984/06] | 11.08.1987 | Despatch of a communication from the examining division (Time limit: M04) | 11.12.1987 | Reply to a communication from the examining division | 04.05.1988 | Despatch of communication of intention to grant (Approval: Yes) | 31.08.1988 | Communication of intention to grant the patent | 21.11.1988 | Fee for grant paid | 21.11.1988 | Fee for publishing/printing paid | Opposition(s) | 09.12.1989 | No opposition filed within time limit [1990/09] | Fees paid | Renewal fee | 20.06.1985 | Renewal fee patent year 03 | 11.06.1986 | Renewal fee patent year 04 | 22.06.1987 | Renewal fee patent year 05 | 14.06.1988 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] ELECTRONIC ENGINEERING, vol. 53, no. 650, March 1981, pages 51-55, London, GB; T. YASUI et al.: "High speed low-power CMOS static RAMs" [A] | [A] ELECTRONICS, vol. 52, no. 9, April 1979, pages 125-135, New York, US; R.P. CAPECE: "The race heats up in fast static RAMs" [A] |