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Extract from the Register of European Patents

EP About this file: EP0107004

EP0107004 - Mask for corpuscular lithography, method for its manufacture and of using it [Right-click to bookmark this link]
Former [1984/18]Mask for electron lithography using the tunneling effect, method for its manufacture and of using it
[1987/06]
StatusNo opposition filed within time limit
Status updated on  11.12.1987
Database last updated on 24.08.2024
Most recent event   Tooltip11.12.1987No opposition filed within time limitpublished on 27.01.1988 [1988/04]
Applicant(s)For all designated states
SIEMENS AKTIENGESELLSCHAFT
Werner-von-Siemens-Str. 1
DE-80333 München / DE
[N/P]
Former [1984/18]For all designated states
SIEMENS AKTIENGESELLSCHAFT
Wittelsbacherplatz 2
D-80333 München / DE
Inventor(s)01 / Lischke, Burkhard, Prof. Dr.
In der Heuluss 13
D-8000 München 82 / DE
[1984/18]
Application number, filing date83109000.612.09.1983
[1984/18]
Priority number, dateDE1982323506422.09.1982         Original published format: DE 3235064
[1984/18]
Filing languageDE
Procedural languageDE
PublicationType: A1 Application with search report 
No.:EP0107004
Date:02.05.1984
Language:DE
[1984/18]
Type: B1 Patent specification 
No.:EP0107004
Date:04.02.1987
Language:DE
[1987/06]
Search report(s)(Supplementary) European search report - dispatched on:EP16.01.1984
ClassificationIPC:G03F7/02
[1984/18]
CPC:
B82Y10/00 (EP,US); H01J1/312 (EP,US); B82Y40/00 (EP,US);
H01J37/073 (EP,US); H01J37/3175 (EP,US); H01J2237/31783 (EP,US);
Y10S430/143 (EP,US) (-)
Designated contracting statesDE,   FR,   GB,   NL [1984/18]
TitleGerman:Maske für die Korpuskularlithografie, Verfahren zu ihrer Herstellung und Verfahren zu ihrem Betrieb[1987/06]
English:Mask for corpuscular lithography, method for its manufacture and of using it[1987/06]
French:Masque pour la litographie corpusculaire, procédé pour sa fabrication et son utilisation[1987/06]
Former [1984/18]Tunnelkathodenmaske für die Elektronenlithogrofie, Verfahren zu ihrer Herstellung und Verfahren zu ihrem Betrieb
Former [1984/18]Mask for electron lithography using the tunneling effect, method for its manufacture and of using it
Former [1984/18]Masque utilisant l'effet tunnel pour la litographie électronique, procédé pour sa fabrication et son utilisation
File destroyed:18.07.1996
Examination procedure24.05.1984Examination requested  [1984/31]
19.09.1985Despatch of a communication from the examining division (Time limit: M04)
20.01.1986Reply to a communication from the examining division
11.04.1986Despatch of communication of intention to grant (Approval: )
29.07.1986Communication of intention to grant the patent
06.08.1986Fee for grant paid
06.08.1986Fee for publishing/printing paid
Opposition(s)05.11.1987No opposition filed within time limit [1988/04]
Fees paidRenewal fee
25.09.1985Renewal fee patent year 03
23.09.1986Renewal fee patent year 04
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Documents cited:Search[A]US3056073  (MEAD CARVER A);
 [A]US3356864  (IVAR GIAEVER);
 [A]US3445733  (ESAKI LEO, et al)
 [AD]  - ELECTRONICS, November 1981, New York R. WARD "Electron-beam projector suits up for submicrometer race"
 [AD]  - VACUUM, Band 31, Nr. 7, 1981, Oxford R. HRACH "Modelling of electron emission from sandwich cathodes"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.