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EP0113954
European procedure
Extract from the Register of European Patents
EP About this file: EP0113954
| EP0113954 - A substrate for manufacturing single crystal thin films [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 28.03.1988 Database last updated on 15.05.2024 | Most recent event Tooltip | 28.03.1988 | No opposition filed within time limit | published on 18.05.1988 [1988/20] | Applicant(s) | For all designated states Hamakawa, Yoshihiro 3-17-4, Minami-Hanayashiki Kawanishi Hyogo / JP | [N/P] |
| Former [1984/30] | For all designated states Hamakawa, Yoshihiro 3-17-4, Minami-Hanayashiki Kawanishi Hyogo / JP | Inventor(s) | 01 /
Hamakawa, Yoshihiro 17-4, Minamihanayashiki 3-chome Kawanishi-shi Hyogo-ken / JP | 02 /
Takakura, Hideyuki 3-12, Hata 2-chome Ikeda-shi Osaka / JP | [1984/30] | Representative(s) | Myerscough, Philip Boyd, et al J.A.KEMP & CO. 14, South Square Gray's Inn London WC1R 5LX / GB | [1984/30] | Application number, filing date | 83306543.6 | 27.10.1983 | [1984/30] | Priority number, date | JP19820202298 | 17.11.1982 Original published format: JP 20229882 | [1984/30] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0113954 | Date: | 25.07.1984 | Language: | EN | [1984/30] | Type: | B1 Patent specification | No.: | EP0113954 | Date: | 27.05.1987 | Language: | EN | [1987/22] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.04.1984 | Classification | IPC: | C30B25/18, C30B19/12, C30B23/02 | [1984/30] | CPC: |
C30B19/12 (EP,US);
C30B23/04 (EP,US);
C30B25/04 (EP,US);
C30B25/18 (EP,US);
Y10S117/902 (EP,US);
Y10S117/914 (EP,US);
Y10T428/12472 (EP,US);
Y10T428/12674 (EP,US);
Y10T428/12722 (EP,US);
Y10T428/12792 (EP,US);
Y10T428/12889 (EP,US);
Y10T428/12896 (EP,US);
Y10T428/12944 (EP,US)
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| Designated contracting states | DE, FR, GB, NL [1984/30] | Title | German: | Substrat für einkristalline Dünnschichtbildung | [1984/30] | English: | A substrate for manufacturing single crystal thin films | [1984/30] | French: | Substrat pour la fabrication d'une couche mince monocristalline | [1984/30] | Examination procedure | 04.09.1984 | Examination requested [1984/46] | 13.06.1985 | Despatch of a communication from the examining division (Time limit: M06) | 23.12.1985 | Reply to a communication from the examining division | 13.03.1986 | Despatch of a communication from the examining division (Time limit: M04) | 14.07.1986 | Reply to a communication from the examining division | 11.09.1986 | Despatch of communication of intention to grant (Approval: ) | 05.11.1986 | Communication of intention to grant the patent | 19.01.1987 | Fee for grant paid | 19.01.1987 | Fee for publishing/printing paid | Opposition(s) | 01.03.1988 | No opposition filed within time limit [1988/20] | Fees paid | Renewal fee | 12.10.1985 | Renewal fee patent year 03 | 09.10.1986 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]WO8102948 (MASSACHUSETTS INST TECHNOLOGY [US]); | [Y]GB1601206 (MASSACHUSETTS INST TECHNOLOGY) | [Y] - INTERNATIONAL ELECTRON DEVICES MEETING 1979, Washington, D.C., 3rd-5th December 1979, pages 210-212, IEEE, New York, USA | [Y] - JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 20, no. 12, December 1981, pages L905-L908, Tokyo, JP. | Examination | - JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 20, no. 12, December 1981, pages L905-L908, Tokyo, JP. H. MORI: "2-D Grating graphoepitaxy of silicon films from silicon-gold supersaturated solution" |