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EP0084475
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EP About this file: EP0084475
| EP0084475 - Matrix of integrated Schottky diode memory elements on polycrystalline silicon, and production method [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 26.08.1985 Database last updated on 07.06.2024 | Most recent event Tooltip | 07.07.2007 | Change - inventor | published on 08.08.2007 [2007/32] | Applicant(s) | For all designated states THOMSON-CSF 173, Boulevard Haussmann F-75008 Paris / FR | [1983/30] | Inventor(s) | 01 /
Terre, Jean-Luc THOMSON-CSF SCPI 173, bld Haussmann F-75379 Paris Cedex 08 / FR | [1983/30] | Representative(s) | Guérin, Michel, et al Marks & Clerk France Conseils en Propriété Industrielle Immeuble Visium 22, Avenue Aristide Briand 94117 Arcueil Cedex / FR | [N/P] |
| Former [1983/30] | Guérin, Michel, et al THOMSON-CSF SCPI B.P. 329 50, rue Jean-Pierre Timbaud F-92402 Courbevoie Cédex / FR | Application number, filing date | 83400037.4 | 07.01.1983 | [1983/30] | Priority number, date | FR19820000613 | 15.01.1982 Original published format: FR 8200613 | [1983/30] | Filing language | FR | Procedural language | FR | Publication | Type: | A2 Application without search report | No.: | EP0084475 | Date: | 27.07.1983 | Language: | FR | [1983/30] | Type: | A3 Search report | No.: | EP0084475 | Date: | 10.08.1983 | Language: | FR | [1983/32] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 07.06.1983 | Classification | IPC: | H01L27/10, G11C17/00, G11C17/06 | [1983/30] | CPC: |
H01L27/1021 (EP);
G11C17/06 (EP);
G11C17/08 (EP)
| Designated contracting states | CH, DE, FR, GB, IT, LI, NL [1983/30] | Title | German: | Matrix von integrierten Speicherelementen aus Schottky dioden auf polykristallinem Silizium und Herstellungsverfahren | [1983/30] | English: | Matrix of integrated Schottky diode memory elements on polycrystalline silicon, and production method | [1983/30] | French: | Matrice d'éléments à mémoire intégrés, à diode Schottky sur silicium polycristallin, et procédé de fabrication | [1983/30] | File destroyed: | 13.07.1991 | Examination procedure | 20.08.1983 | Examination requested [1983/43] | 06.03.1985 | Despatch of communication of intention to grant (Approval: ) | 24.05.1985 | Communication of intention to grant the patent | 05.08.1985 | Application withdrawn by applicant [1985/44] | Fees paid | Renewal fee | 21.12.1984 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]FR2088515 ; | [Y]US4203123 ; | [A]US3749987 ; | [A]EP0013603 | [A] - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 1, juin 1978, page 146, New York (US); J.J. GNIEWEK et al. "Forming high and low barrier height Schottky barrier diodes and ohmic contacts with no PtSi" |