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Extract from the Register of European Patents

EP About this file: EP0139165

EP0139165 - Method of making a trench isolated integrated circuit device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  16.05.1991
Database last updated on 15.06.2024
Most recent event   Tooltip16.05.1991No opposition filed within time limitpublished on 03.07.1991 [1991/27]
Applicant(s)For all designated states
International Business Machines Corporation
New Orchard Road
Armonk, NY 10504 / US
[N/P]
Former [1985/18]For all designated states
International Business Machines Corporation
Old Orchard Road
Armonk, N.Y. 10504 / US
Inventor(s)01 / Chesebro, Donald George
13 Cedar Ridge Drive
Colchester, Vt. / US
02 / Soychak, Francis John
17 Colbert Street
Essex Junction, Vt. / US
[1985/18]
Representative(s)Gaugel, Heinz
IBM Deutschland GmbH Schönaicher Strasse 220
D-7030 Böblingen / DE
[N/P]
Former [1989/39]Gaugel, Heinz, Dipl.-Ing.
IBM Deutschland GmbH Schönaicher Strasse 220
D-7030 Böblingen / DE
Former [1985/18]Mönig, Anton, Dipl.-Ing.
IBM Deutschland Informationssysteme GmbH, Patentwesen und Urheberrecht
D-70548 Stuttgart / DE
Application number, filing date84110055.523.08.1984
[1985/18]
Priority number, dateUS1983053919305.10.1983         Original published format: US 539193
[1985/18]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0139165
Date:02.05.1985
Language:EN
[1985/18]
Type: A3 Search report 
No.:EP0139165
Date:07.10.1987
Language:EN
[1987/41]
Type: B1 Patent specification 
No.:EP0139165
Date:11.07.1990
Language:EN
[1990/28]
Search report(s)(Supplementary) European search report - dispatched on:EP17.08.1987
ClassificationIPC:H01L21/76, H01L21/31
[1985/18]
CPC:
H01L21/743 (EP,US); H01L21/76232 (EP,US); H01L29/7325 (EP,US)
Designated contracting statesDE,   FR,   GB [1985/18]
TitleGerman:Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit Isolierwannen[1985/18]
English:Method of making a trench isolated integrated circuit device[1985/18]
French:Procédé pour la fabrication d'un dispositif à circuit intégré comportant des rainures d'isolation[1985/18]
Examination procedure23.11.1984Examination requested  [1985/18]
01.06.1989Despatch of a communication from the examining division (Time limit: M04)
29.07.1989Reply to a communication from the examining division
05.10.1989Despatch of communication of intention to grant (Approval: Yes)
12.01.1990Communication of intention to grant the patent
24.01.1990Fee for grant paid
24.01.1990Fee for publishing/printing paid
Opposition(s)12.04.1991No opposition filed within time limit [1991/27]
Fees paidRenewal fee
19.08.1986Renewal fee patent year 03
21.08.1987Renewal fee patent year 04
23.08.1988Renewal fee patent year 05
21.08.1989Renewal fee patent year 06
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Documents cited:Search[Y]US4111724  (OGIUE KATUMI, et al);
 [Y]FR2308204  (IBM [US]);
 [A]GB2107926  (MONOLITHIC MEMORIES INC)
 [Y]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no. 7B, December 1981, pages 3861-3864, New York, US; C.G. JAMBOTKAR: "Method to fabricate very dense EPROM cell arrays"
 [A]  - IBM TECHNICAL DISCLOSURE BULLETIN, vol. 22, no. 3, August 1979, pages 1004-1007, New York, US; S.D. MALAVIYA et al.: "Bipolar process with self-aligned contacts and isolation"
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.