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Extract from the Register of European Patents

EP About this file: EP0148470

EP0148470 - Planar magnetron sputtering with modified field configuration [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  09.01.1992
Database last updated on 02.09.2024
Most recent event   Tooltip15.08.2008Change - representativepublished on 17.09.2008  [2008/38]
Applicant(s)For all designated states
Hitachi, Ltd.
6, Kanda Surugadai 4-chome
Chiyoda-ku
Tokyo / JP
[N/P]
Former [1985/29]For all designated states
HITACHI, LTD.
6, Kanda Surugadai 4-chome
Chiyoda-ku, Tokyo 100 / JP
Inventor(s)01 / Kobayashi, Shigeru
31-3, Hanegi-1-chome Setagaya-ku
Tokyo / JP
02 / Abe, Katsuo
2-12, Take-5-chome
Yokosuka-shi / JP
03 / Sakata, Masao
Fujimiryo, 1545, Yoshidacho
Totsuka-ku Yokohama / JP
04 / Kasahara, Osamu
8-9, Higashikoigakubo-3-chome
Kokubunji-shi / JP
05 / Ogishi, Hidetsugu
1018-16, Inumecho
Hachioji-shi / JP
[1985/29]
Representative(s)Beetz & Partner mbB
Patentanwälte
Prinzregentenstraße 54
80538 München / DE
[N/P]
Former [2008/38]Beetz & Partner
Patentanwälte Steinsdorfstrasse 10
80538 München / DE
Former [1985/29]Patentanwälte Beetz - Timpe - Siegfried Schmitt-Fumian - Mayr
Steinsdorfstrasse 10
D-80538 München / DE
Application number, filing date84115772.019.12.1984
[1985/29]
Priority number, dateJP1983023988421.12.1983         Original published format: JP 23988483
JP1983024384326.12.1983         Original published format: JP 24384383
JP1983024384426.12.1983         Original published format: JP 24384483
[1985/29]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0148470
Date:17.07.1985
Language:EN
[1985/29]
Type: A3 Search report 
No.:EP0148470
Date:16.07.1986
Language:EN
[1986/29]
Type: B1 Patent specification 
No.:EP0148470
Date:02.08.1989
Language:EN
[1989/31]
Search report(s)(Supplementary) European search report - dispatched on:EP29.05.1986
ClassificationIPC:H01J37/34
[1985/29]
CPC:
H01J37/3429 (EP,US); C23C14/34 (KR); H01J37/3408 (EP,US);
H01J37/3458 (EP,US)
Designated contracting statesDE,   FR,   GB [1985/29]
TitleGerman:Planar-Magnetron-Kathodenzerstaubung mit veränderter Feldgestaltung[1985/29]
English:Planar magnetron sputtering with modified field configuration[1985/29]
French:Pulvérisation cathodique à magnétron planaire à configuration de champ modifiée[1985/29]
Examination procedure21.07.1986Examination requested  [1986/38]
22.01.1988Despatch of a communication from the examining division (Time limit: M06)
26.07.1988Reply to a communication from the examining division
31.10.1988Despatch of communication of intention to grant (Approval: Yes)
27.01.1989Communication of intention to grant the patent
03.03.1989Fee for grant paid
03.03.1989Fee for publishing/printing paid
Opposition(s)03.05.1990No opposition filed within time limit [1992/09]
Fees paidRenewal fee
18.12.1986Renewal fee patent year 03
17.12.1987Renewal fee patent year 04
27.12.1988Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[AD]EP0070574  (HITACHI LTD [JP]);
 [A]US4391697  (MORRISON JR CHARLES F)
ExaminationUS4265729
 EP0081176
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.