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EP0147893
European procedure
Extract from the Register of European Patents
EP About this file: EP0147893
| EP0147893 - Semiconductor devices [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 06.04.1988 Database last updated on 09.04.2026 | Most recent event Tooltip | 06.04.1988 | No opposition filed within time limit | published on 25.05.1988 [1988/21] | Applicant(s) | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | For:DE
FR
NL
Koninklijke Philips Electronics N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | [N/P] |
| Former [1985/28] | For:GB
PHILIPS ELECTRONICS UK LIMITED 420-430 London Road Croydon CR9 3QR / GB | ||
| For:DE
FR
NL
Philips Electronics N.V. Groenewoudseweg 1 NL-5621 BA Eindhoven / NL | Inventor(s) | 01 /
Shannon, John Martin c/o PHILIPS RESEARCH LABORATORIES Redhill Surrey RH1 5HA / GB | 02 /
Slatter, John Alfred George c/o PHILIPS RESEARCH LABORATORIES Redhill Surrey RH1 5HA / GB | 03 /
Coe, David James c/o PHILIPS RESEARCH LABORATORIES Redhill Surrey RH1 5HA / GB | [1985/28] | Representative(s) | Stevens, Brian Thomas, et al Philips Electronics UK Limited Patents and Trade Marks Department Cross Oak Lane Redhill, Surrey RH1 5HA / GB | [1985/28] | Application number, filing date | 84201865.7 | 14.12.1984 | [1985/28] | Priority number, date | GB19830033818 | 20.12.1983 Original published format: GB 8333818 | [1985/28] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0147893 | Date: | 10.07.1985 | Language: | EN | [1985/28] | Type: | B1 Patent specification | No.: | EP0147893 | Date: | 20.05.1987 | Language: | EN | [1987/21] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.05.1985 | Classification | IPC: | H01L29/91, H01L29/06 | [1985/28] | CPC: |
H10D30/668 (EP,US);
H10D62/106 (EP,US);
H10D64/111 (EP,US);
H10D64/117 (EP,US);
H10D64/118 (EP,US);
H10D8/60 (EP,US);
H10D8/825 (EP,US)
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| Designated contracting states | DE, FR, GB, NL [1985/28] | Title | German: | Halbleiterbauelemente | [1987/21] | English: | Semiconductor devices | [1985/28] | French: | Dispositifs semi-conducteurs | [1987/21] |
| Former [1985/28] | Halbleiterbauelement | ||
| Former [1985/28] | Dispositif semi-conducteur | Examination procedure | 27.11.1985 | Examination requested [1986/06] | 31.07.1986 | Despatch of communication of intention to grant (Approval: ) | 18.11.1986 | Communication of intention to grant the patent | 29.01.1987 | Fee for grant paid | 29.01.1987 | Fee for publishing/printing paid | Opposition(s) | 23.02.1988 | No opposition filed within time limit [1988/21] | Fees paid | Renewal fee | 19.12.1986 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no.1, June 1978, New York, USA; J.GNIEWEK et al. "Forming high and low Barrier Height Schottky Barrier Diodes and Ohmic Contacts with no PtSi", page 146 [A] | [AD] SOLDI-STATE ELECTRONICS, vol. 26, no. 5, May 1983,Exeter, GB; B. WILAMOWSKI "Schottky Diodes with high Breakdown Voltages", pages 491-493 [AD] |