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EP0127281
European procedure
Extract from the Register of European Patents
EP About this file: EP0127281
| EP0127281 - An electrode for a semiconductor device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 05.05.1988 Database last updated on 11.04.2026 | Most recent event Tooltip | 05.05.1988 | No opposition filed within time limit | published on 22.06.1988 [1988/25] | Applicant(s) | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi Kanagawa 211 / JP | [N/P] |
| Former [1984/49] | For all designated states FUJITSU LIMITED 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 / JP | Inventor(s) | 01 /
Watanabe, Kiyoshi Adachi-so, 1-13-6 Midorigaoka Meguro-ku Tokyo 152 / JP | 02 /
Takeuchi, Tohru G.H 31-203 6205-6, Izumi-cho Totsuka-ku Yokohama-shi Kanagawa 245 / JP | 03 /
Ohtake Hideaki Fujitsu Dai-6 Fujigasha-ryo 17-15 Umegasha Midori-ku Yokohama-shi Kanagawa 227 / JP | 04 /
Fujita, Ichiro 5-5-301, Matsugae-cho Sagamihara-shi Kanagawa 228 / JP | [1984/49] | Representative(s) | Fane, Christopher Robin King, et al Haseltine Lake & Co., Imperial House, 15-19 Kingsway London WC2B 6UD / GB | [N/P] |
| Former [1984/49] | Fane, Christopher Robin King, et al HASELTINE LAKE & CO. Hazlitt House 28 Southampton Buildings Chancery Lane London, WC2A 1AT / GB | Application number, filing date | 84301991.0 | 23.03.1984 | [1984/49] | Priority number, date | JP19830049792 | 25.03.1983 Original published format: JP 4979283 | [1984/49] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0127281 | Date: | 05.12.1984 | Language: | EN | [1984/49] | Type: | B1 Patent specification | No.: | EP0127281 | Date: | 24.06.1987 | Language: | EN | [1987/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.08.1984 | Classification | IPC: | H01L21/285, H01L21/60, H01L23/48, H01L29/40 | [1984/49] | CPC: |
H10W20/038 (EP,US);
H10D62/83 (EP,US);
H10D64/62 (EP,US);
H10W20/033 (EP,US);
H10W20/064 (EP,US);
Y10S257/915 (EP,US)
| Designated contracting states | DE, FR, GB [1984/49] | Title | German: | Elektrode für Halbleiterbauelement | [1984/49] | English: | An electrode for a semiconductor device | [1984/49] | French: | Electrode pour dispositif à semi-conducteur | [1984/49] | File destroyed: | 12.06.1999 | Examination procedure | 14.12.1984 | Examination requested [1985/10] | 31.07.1986 | Despatch of communication of intention to grant (Approval: ) | 10.11.1986 | Communication of intention to grant the patent | 22.12.1986 | Fee for grant paid | 22.12.1986 | Fee for publishing/printing paid | Opposition(s) | 25.03.1988 | No opposition filed within time limit [1988/25] | Fees paid | Renewal fee | 14.03.1986 | Renewal fee patent year 03 | 13.03.1987 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] Chemical Abstracts vol. 82, no. 10, 10 March Columbus, Ohio, USA; P.S. KISLYI "Effect of chemical and physical factors on sintering of titanium nitride", page 396, column 1, abstract no. 63455r & Teor. Tekhnol. Spekaniya, Dokl., Mezhdunar. Koll [A] | [AP] JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 130, no. 5, May 1983, Manchester, USA; I. SUNI et al. "Thermal stability of hafnium and titanium nitride diffusion barriers in multilayer contacts to silicon", pages 1215-1218 [AP] | [A] THIN SOLID FILMS, vol. 53, no. 2, 1978, Lausanne, CH; P.B. GHATE et al. "Application of Ti:W barrier metallization for integrated circuits", pages 117-128 [A] | [A] APPLIED PHYSICS LETTERS, vol. 36, no. 6, 15 March 1980, New York, USA; M. WITTMER "TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices", pages 456-458 [A] |